Inventor
WANG MING-FANG
TW27 patents
⚠️ This page may combine multiple inventors who share the name “WANG MING-FANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
17 patentsUS6656764B1Dec 2, 2003
Process for integration of a high dielectric constant gate insulator layer in a CMOS device
TAIWAN SEMICONDUCTOR MFG111 citations99
US6706581B1Mar 16, 2004
Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices
TAIWAN SEMICONDUCTOR MFG78 citations97
US6890811B2May 10, 2005
Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices
TAIWAN SEMICONDUCTOR MFG63 citations95
US6455330B1Sep 24, 2002
Methods to create high-k dielectric gate electrodes with backside cleaning
TAIWAN SEMICONDUCTOR MFG51 citations93
US7071066B2Jul 4, 2006
Method and structure for forming high-k gates
TAIWAN SEMICONDUCTOR MFG46 citations92
US7030024B2Apr 18, 2006
Dual-gate structure and method of fabricating integrated circuits having dual-gate structures
TAIWAN SEMICONDUCTOR MFG31 citations92
US7087480B1Aug 8, 2006
Process to make high-k transistor dielectrics
TAIWAN SEMICONDUCTOR MFG15 citations89
US7303996B2Dec 4, 2007
High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
TAIWAN SEMICONDUCTOR MFG14 citations81
US8012824B2Sep 6, 2011
Process to make high-K transistor dielectrics
TAIWAN SEMICONDUCTOR MFG5 citations74
US6914313B2Jul 5, 2005
Process for integration of a high dielectric constant gate insulator layer in a CMOS device
TAIWAN SEMICONDUCTOR MFG8 citations74
US6780788B2Aug 24, 2004
Methods for improving within-wafer uniformity of gate oxide
TAIWAN SEMICONDUCTOR MFG12 citations74
US6764927B1Jul 20, 2004
Chemical vapor deposition (CVD) method employing wetting pre-treatment
TAIWAN SEMICONDUCTOR MFG9 citations72
US7393766B2Jul 1, 2008
Process for integration of a high dielectric constant gate insulator layer in a CMOS device
TAIWAN SEMICONDUCTOR MFG2 citations63
US7018879B2Mar 28, 2006
Method of making an ultrathin silicon dioxide gate with improved dielectric properties using NH3 nitridation and post-deposition rapid thermal annealing
TAIWAN SEMICONDUCTOR MFG4 citations63
US7351994B2Apr 1, 2008
Noble high-k device
TAIWAN SEMICONDUCTOR MFG2 citations62
US7271450B2Sep 18, 2007
Dual-gate structure and method of fabricating integrated circuits having dual-gate structures
TAIWAN SEMICONDUCTOR MFG3 citations62
US7037816B2May 2, 2006
System and method for integration of HfO2 and RTCVD poly-silicon
TAIWAN SEMICONDUCTOR MFG2 citations53
KUAN HSINGS ENTPR CORP
4 patentsUS7314255B2Jan 1, 2008
Structure of wheel rim cover
KUAN HSINGS ENTPR CORP23 citations92
US6702396B1Mar 9, 2004
Wheel cover having rotating wing plate
KUAN HSINGS ENTPR CORP22 citations92
US6932434B2Aug 23, 2005
Extensional hubcap docking structure
KUAN HSINGS ENTPR CORP13 citations84
US6702395B1Mar 9, 2004
Rotating wing structure of steel wheel
KUAN HSINGS ENTPR CORP15 citations84