Inventor

SCHLOEGL DANIEL

AT21 patents

⚠️ This page may combine multiple inventors who share the name “SCHLOEGL DANIEL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SCHLOEGL DANIEL

INFINEON TECHNOLOGIES AG

Semiconductor to metal transition for semiconductor devices

Producing a semiconductor device by epitaxial growth

Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure

Method of manufacturing a power semiconductor device

Power semiconductor device

Semiconductor to metal transition

Vertical power semiconductor device and manufacturing method

Vertical power semiconductor device including a field stop region having a plurality of impurity peaks

Semiconductor diode and method of manufacturing a semiconductor diode

Semiconductor device and a method for manufacturing a semiconductor device having a semi-insulating region

Power semiconductor diode including field stop region

Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone

Semiconductor device including undulated profile of net doping in a drift zone

Semiconductor device including a field stop region

Method for manufacturing a power semiconductor device having a reduced oxygen concentration

Method for processing a semiconductor device and semiconductor device

Method for processing a semiconductor device and semiconductor device

Semiconductor device including a field stop region

SCHMIDT GERHARD R

Method of manufacturing a semiconductor device including a dielectric structure

Semiconductor device and a method for manufacturing a semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG

Producing a semiconductor device by epitaxial growth