Inventor

KUENLE MATTHIAS

AT21 patents

⚠️ This page may combine multiple inventors who share the name “KUENLE MATTHIAS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KUENLE MATTHIAS

INFINEON TECHNOLOGIES AG

Producing a semiconductor device by epitaxial growth

Method of manufacturing a power semiconductor device

Power semiconductor device

Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer

Methods for forming a semiconductor device

Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor wafer

Buried insulator regions and methods of formation thereof

Semiconductor substrate having an alignment structure

Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method

Semiconductor wafer and method for processing a semiconductor wafer

Semiconductor wafer and method for processing a semiconductor wafer

Apparatus and method for chemical vapor deposition process for semiconductor substrates

Substrate processing chamber and process gas flow deflector for use in the processing chamber

Method for manufacturing a power semiconductor device having a reduced oxygen concentration

Method for manufacturing a semiconductor device

INFINEON TECHNOLOGIES AUSTRIA AG

Method for producing a superjunction device

Method for producing a superjunction device

Semiconductor device including a vertical PN junction between a body region and a drift region

Producing a semiconductor device by epitaxial growth

Method of forming a trench using epitaxial lateral overgrowth

INFINEON TECHNOLOGIES AUSTRIA

Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structure