Inventor
HWANG KIUCHUL
US12 patents
Patents
12 patentsUS7183592B2Feb 27, 2007
Field effect transistor
RAYTHEON CO19 citations90
US7361536B2Apr 22, 2008
Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor
RAYTHEON CO10 citations82
US7626218B2Dec 1, 2009
Monolithic integrated circuit having enhancement mode/depletion mode field effect transistors and RF/RF/microwave/milli-meter wave milli-meter wave field effect transistors
RAYTHEON CO7 citations72
US11362190B2Jun 14, 2022
Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers
RAYTHEON CO2 citations70
US11101378B2Aug 24, 2021
Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
RAYTHEON CO4 citations69
US11127596B2Sep 21, 2021
Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation
RAYTHEON CO2 citations67
US11594627B2Feb 28, 2023
Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
RAYTHEON CO0 citations59
US10797129B2Oct 6, 2020
Field effect transistor structure having notched mesa
RAYTHEON CO0 citations50
US10134839B2Nov 20, 2018
Field effect transistor structure having notched mesa
RAYTHEON CO0 citations50
US10541148B2Jan 21, 2020
Method for controlling the amount of radiation having a predetermined wavelength to be absorbed by a structure disposed on a semiconductor
RAYTHEON CO0 citations49
US9887089B2Feb 6, 2018
Semiconductor structures having T-shaped electrodes
RAYTHEON CO1 citations45
US7498223B2Mar 3, 2009
Semiconductor devices having improved field plates
RAYTHEON CO0 citations39