Inventor
SCHULTZ BRIAN D
US13 patents
⚠️ This page may combine multiple inventors who share the name “SCHULTZ BRIAN D”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RAYTHEON CO
10 patentsUS9419125B1Aug 16, 2016
Doped barrier layers in epitaxial group III nitrides
RAYTHEON CO24 citations92
US9960262B2May 1, 2018
Group III—nitride double-heterojunction field effect transistor
RAYTHEON CO9 citations83
US10276705B2Apr 30, 2019
Group III—nitride double-heterojunction field effect transistor
RAYTHEON CO3 citations72
US11362190B2Jun 14, 2022
Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers
RAYTHEON CO2 citations70
US11101378B2Aug 24, 2021
Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
RAYTHEON CO4 citations69
US11127596B2Sep 21, 2021
Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation
RAYTHEON CO2 citations67
US11594627B2Feb 28, 2023
Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
RAYTHEON CO0 citations59
US11942919B2Mar 26, 2024
Strain compensated rare earth group III-nitride heterostructures
RAYTHEON CO0 citations55
US11545566B2Jan 3, 2023
Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement
RAYTHEON CO0 citations49
US10622447B2Apr 14, 2020
Group III-nitride structure having successively reduced crystallographic dislocation density regions
RAYTHEON CO0 citations37