P

Inventor

LIU WEI-MIN

US33 patents
⚠️ This page may combine multiple inventors who share the name “LIU WEI-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

18 patents
US11804408B2Oct 31, 2023

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11348840B2May 31, 2022

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12419084B2Sep 16, 2025

Methods of forming transistor source/drain regions comprising carbon liner layers

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12336237B2Jun 17, 2025

Source/drain regions of semiconductor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12437990B2Oct 7, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12310091B2May 20, 2025

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243931B2Mar 4, 2025

Source/drain epitaxial layers for transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074071B2Aug 27, 2024

Source/drain structures and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11600534B2Mar 7, 2023

Source/drain structures and method of forming

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11527650B2Dec 13, 2022

FinFET device having a source/drain region with a multi-sloped undersurface

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12396242B2Aug 19, 2025

Nano-structure transistors with air inner spacers and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12302615B2May 13, 2025

Epitaxial structures exposed in airgaps for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11923409B2Mar 5, 2024

Epitaxial structures exposed in airgaps for semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12532518B2Jan 20, 2026

Transistor source/drain regions and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12255255B2Mar 18, 2025

Method of manufacturing a FinFET with merged epitaxial source/drain regions

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12132118B2Oct 29, 2024

Semiconductor device having a multilayer source/drain region and methods of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11677013B2Jun 13, 2023

Source/drain epitaxial layers for transistors

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11532750B2Dec 20, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

ROCHE MOLECULAR SYSTEMS INC

8 patents

LIU WEI-MIN

2 patents

AFFYMETRIX INC

1 patent

SAFDAR NABILE

1 patent

ROCHE MOLECULAR SYSTEM INC

1 patent

UNIV TAIPEI MEDICAL

1 patent

RICHWAVE TECHNOLOGY CORP

1 patent