Inventor
LIU WEI-MIN
US33 patents
⚠️ This page may combine multiple inventors who share the name “LIU WEI-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS11804408B2Oct 31, 2023
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11348840B2May 31, 2022
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US12419084B2Sep 16, 2025
Methods of forming transistor source/drain regions comprising carbon liner layers
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12336237B2Jun 17, 2025
Source/drain regions of semiconductor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations64
US12437990B2Oct 7, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12310091B2May 20, 2025
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243931B2Mar 4, 2025
Source/drain epitaxial layers for transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074071B2Aug 27, 2024
Source/drain structures and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11600534B2Mar 7, 2023
Source/drain structures and method of forming
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11527650B2Dec 13, 2022
FinFET device having a source/drain region with a multi-sloped undersurface
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12396242B2Aug 19, 2025
Nano-structure transistors with air inner spacers and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12302615B2May 13, 2025
Epitaxial structures exposed in airgaps for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11923409B2Mar 5, 2024
Epitaxial structures exposed in airgaps for semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US12532518B2Jan 20, 2026
Transistor source/drain regions and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12255255B2Mar 18, 2025
Method of manufacturing a FinFET with merged epitaxial source/drain regions
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12132118B2Oct 29, 2024
Semiconductor device having a multilayer source/drain region and methods of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11677013B2Jun 13, 2023
Source/drain epitaxial layers for transistors
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11532750B2Dec 20, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
ROCHE MOLECULAR SYSTEMS INC
8 patentsUS9399794B2Jul 26, 2016
Method of detecting nucleic acid targets using a statistical classifier
ROCHE MOLECULAR SYSTEMS INC14 citations83
US10216895B2Feb 26, 2019
Rare variant calls in ultra-deep sequencing
ROCHE MOLECULAR SYSTEMS INC5 citations72
US9218450B2Dec 22, 2015
Accurate and fast mapping of reads to genome
ROCHE MOLECULAR SYSTEMS INC4 citations69
US11124840B2Sep 21, 2021
Methods and compositions for classifying DLBCL
ROCHE MOLECULAR SYSTEMS INC0 citations55
US9738935B2Aug 22, 2017
Complex mutations in the epidermal growth factor receptor kinase domain
ROCHE MOLECULAR SYSTEMS INC0 citations51
US10127351B2Nov 13, 2018
Accurate and fast mapping of reads to genome
ROCHE MOLECULAR SYSTEMS INC0 citations48
US9963748B2May 8, 2018
Methods and compositions for classifying DLBCL
ROCHE MOLECULAR SYSTEMS INC0 citations45
US9994914B2Jun 12, 2018
Mutation in the epidermal growth factor receptor kinase domain
ROCHE MOLECULAR SYSTEMS INC0 citations43