Inventor
LEE SEUNGYOUNG
US25 patents
Patents
25 patentsUS11222831B2Jan 11, 2022
Stacked integrated circuit devices
SAMSUNG ELECTRONICS CO LTD4 citations84
US9773772B2Sep 26, 2017
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US10622999B2Apr 14, 2020
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations83
US10505546B2Dec 10, 2019
Semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations83
US11699636B2Jul 11, 2023
Stacked integrated circuit devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US11302636B2Apr 12, 2022
Semiconductor device and manufacturing method of the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10026688B2Jul 17, 2018
Semiconductor device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US10541243B2Jan 21, 2020
Semiconductor device including a gate electrode and a conductive structure
SAMSUNG ELECTRONICS CO LTD4 citations72
US9929023B2Mar 27, 2018
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD3 citations72
US9646960B2May 9, 2017
System-on-chip devices and methods of designing a layout therefor
SAMSUNG ELECTRONICS CO LTD4 citations72
US10134838B2Nov 20, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD2 citations71
US10579131B2Mar 3, 2020
Apparatus and method for applying suitable voltage to a component of a system-on-chip
SAMSUNG ELECTRONICS CO LTD2 citations65
US12341085B2Jun 24, 2025
Stacked integrated circuit devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US12002738B2Jun 4, 2024
Stacked integrated circuit devices
SAMSUNG ELECTRONICS CO LTD0 citations62
US11323119B2May 3, 2022
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US11101803B2Aug 24, 2021
Semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations62
US12557677B2Feb 17, 2026
Backside power distribution network semiconductor architecture using direct epitaxial layer connection and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12183738B2Dec 31, 2024
Cross-coupled gate design for stacked device with separated top-down gate
SAMSUNG ELECTRONICS CO LTD0 citations51
US12144163B2Nov 12, 2024
Selective double diffusion break structures for multi-stack semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12131996B2Oct 29, 2024
Stacked device with backside power distribution network and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations51
US10217647B2Feb 26, 2019
Method of manufacturing semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations51
US12588249B2Mar 24, 2026
Integrated circuit devices including a cross-coupled structure
SAMSUNG ELECTRONICS CO LTD0 citations50
US12374623B2Jul 29, 2025
Stacked semiconductor device architecture
SAMSUNG ELECTRONICS CO LTD0 citations50
US12019965B2Jun 25, 2024
Integrated circuit including standard cell and method of manufacturing the integrated circuit
SAMSUNG ELECTRONICS CO LTD0 citations49
US12588489B2Mar 24, 2026
Integrated circuit devices including stacked elements and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations47