P

Inventor

KIM WHAN-KYUN

KR11 patents
⚠️ This page may combine multiple inventors who share the name “KIM WHAN-KYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

7 patents
US9837468B2Dec 5, 2017

Magnetoresistive random access memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations72
US10784442B2Sep 22, 2020

Method of manufacturing a magnetoresistive random access memory device

SAMSUNG ELECTRONICS CO LTD1 citations71
US11293091B2Apr 5, 2022

Substrate processing apparatus

SAMSUNG ELECTRONICS CO LTD0 citations61
US11665970B2May 30, 2023

Magnetoresistive random access memory (MRAM) device

SAMSUNG ELECTRONICS CO LTD0 citations60
US11031549B2Jun 8, 2021

Magnetoresistive random access memory (MRAM) device

SAMSUNG ELECTRONICS CO LTD0 citations60
US10096650B2Oct 9, 2018

Method of manufacturing magnetoresistive random access memory device

SAMSUNG ELECTRONICS CO LTD0 citations51
US10847713B2Nov 24, 2020

Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) device

SAMSUNG ELECTRONICS CO LTD0 citations49

KIM WHAN-KYUN

2 patents
US9224784B2Dec 29, 2015

Non-volatile memory devices and methods of fabricating the same

KIM WHAN-KYUN2 citations57
US9224787B2Dec 29, 2015

Method for fabricating nonvolatile memory device

KIM WHAN-KYUN0 citations47

LEE JOON MYOUNG

1 patent
US10640865B2May 5, 2020

Substrate processing apparatus and method for manufacturing semiconductor device using the same

LEE JOON MYOUNG1 citations55

SHIN HYEON-JIN

1 patent
US9576916B2Feb 21, 2017

High frequency circuit comprising graphene and method of operating the same

SHIN HYEON-JIN0 citations45