Inventor

JANG YOUNG-MAN

KR17 patents

⚠️ This page may combine multiple inventors who share the name “JANG YOUNG-MAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

JANG YOUNG-MAN

SAMSUNG ELECTRONICS CO LTD

Magnetic tunnel junction including a free layer structure and magnetic memory device comprising the same

Thermally stable magnetic tunnel junction cell and memory device including the same

Magnetic tunnel junction and magnetic memory device comprising the same

Magnetic memory devices and methods of operating the same

Magnetoresistive random access memory device and method of manufacturing the same

Substrate processing apparatus

Magnetoresistive elements having protrusion from free layer and memory devices including the same

Method of manufacturing magnetoresistive random access memory device

PI UNG-HWAN

Magnetic memory device

Magnetic memory devices and methods of writing data to the same

Memory device using spin hall effect and methods of manufacturing and operating the memory device

LEE SUNG-CHUL

Magnetic memory devices

Magnetoresistive elements and memory devices including the same

KIM KWANG-SEOK

Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same

LEE JOON MYOUNG

Substrate processing apparatus and method for manufacturing semiconductor device using the same

PI UNG HWAN

Magnetic memory device

KIM KEE-WON

Magnetoresistive structures, magnetic random-access memory devices including the same and methods of manufacturing the magnetoresistive structure