Inventor
KRYSAK MARIE
US30 patents
Patents
30 patentsUS10892223B2Jan 12, 2021
Advanced lithography and self-assembled devices
INTEL CORP11 citations86
US9899255B2Feb 20, 2018
Via blocking layer
INTEL CORP8 citations84
US12218052B2Feb 4, 2025
Advanced lithography and self-assembled devices
INTEL CORP1 citations75
US11854787B2Dec 26, 2023
Advanced lithography and self-assembled devices
INTEL CORP1 citations73
US11373950B2Jun 28, 2022
Advanced lithography and self-assembled devices
INTEL CORP1 citations73
US11320734B2May 3, 2022
Ligand-capped main group nanoparticles as high absorption extreme ultraviolet lithography resists
INTEL CORP2 citations73
US11137681B2Oct 5, 2021
Lined photobucket structure for back end of line (BEOL) interconnect formation
INTEL CORP2 citations72
US10256141B2Apr 9, 2019
Maskless air gap to prevent via punch through
INTEL CORP3 citations72
US11315798B2Apr 26, 2022
Two-stage bake photoresist with releasable quencher
INTEL CORP2 citations70
US12107044B2Oct 1, 2024
Metal oxycarbide resists as leave behind plugs
INTEL CORP0 citations62
US11955377B2Apr 9, 2024
Differential hardmasks for modulation of electrobucket sensitivity
INTEL CORP0 citations62
US11874600B2Jan 16, 2024
Ligand-capped main group nanoparticles as high absorption extreme ultraviolet lithography resists
INTEL CORP0 citations62
US11862463B2Jan 2, 2024
Metal oxide nanoparticles as fillable hardmask materials
INTEL CORP0 citations62
US11251072B2Feb 15, 2022
Differential hardmasks for modulation of electrobucket sensitivity
INTEL CORP0 citations62
US11227766B2Jan 18, 2022
Metal oxide nanoparticles as fillable hardmask materials
INTEL CORP0 citations62
US10971394B2Apr 6, 2021
Maskless air gap to prevent via punch through
INTEL CORP0 citations62
US11953826B2Apr 9, 2024
Lined photobucket structure for back end of line (BEOL) interconnect formation
INTEL CORP0 citations61
US11406972B2Aug 9, 2022
Activation of protected cross-linking catalysts during formation of dielectric materials
INTEL CORP0 citations61
US11152254B2Oct 19, 2021
Pitch quartered three-dimensional air gaps
INTEL CORP0 citations61
US11024538B2Jun 1, 2021
Hardened plug for improved shorting margin
INTEL CORP0 citations61
US12037434B2Jul 16, 2024
Chemical compositions and methods of patterning microelectronic device structures
INTEL CORP0 citations60
US11955343B2Apr 9, 2024
Two-stage bake photoresist with releasable quencher
INTEL CORP0 citations60
US11846883B2Dec 19, 2023
Chain scission photoresists and methods for forming chain scission photoresists
INTEL CORP0 citations60
US11217456B2Jan 4, 2022
Selective etching and controlled atomic layer etching of transition metal oxide films for device fabrication
INTEL CORP0 citations60
US11262654B2Mar 1, 2022
Chain scission resist compositions for EUV lithography applications
INTEL CORP0 citations59
US12012473B2Jun 18, 2024
Directed self-assembly structures and techniques
INTEL CORP0 citations56
US10672650B2Jun 2, 2020
Via blocking layer
INTEL CORP0 citations52
US10535601B2Jan 14, 2020
Via blocking layer
INTEL CORP0 citations52
US11984317B2May 14, 2024
EUV patterning methods, structures, and materials
INTEL CORP0 citations47
US10692757B2Jun 23, 2020
Means to decouple the diffusion and solubility switch mechanisms of photoresists
INTEL CORP0 citations45