Inventor

BLACKWELL JAMES M

US45 patents

⚠️ This page may combine multiple inventors who share the name “BLACKWELL JAMES M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

BLACKWELL JAMES M

INTEL CORP

Dielectric interface for group III-V semiconductor device

Dielectric interface for group III-V semiconductor device

Advanced lithography and self-assembled devices

Subtractively patterned interconnect structures for integrated circuits

Image tone-reversal with a dielectric using bottom-up cross-linking for back end of line (BEOL) interconnects

Precursor and process design for photo-assisted metal atomic layer deposition (ALD) and chemical vapor deposition (CVD)

Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions

Advanced lithography and self-assembled devices

Advanced lithography and self-assembled devices

Advanced lithography and self-assembled devices

Ligand-capped main group nanoparticles as high absorption extreme ultraviolet lithography resists

Self-aligned via

Lined photobucket structure for back end of line (BEOL) interconnect formation

Bottom-up selective dielectric cross-linking to prevent via landing shorts

High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces

Subtractively patterned interconnect structures for integrated circuits

Two-stage bake photoresist with releasable quencher

Non-lithographically patterned directed self assembly alignment promotion layers

Bottom-up fill dielectric materials for semiconductor structure fabrication and their methods of fabrication

Differential hardmasks for modulation of electrobucket sensitivity

Ligand-capped main group nanoparticles as high absorption extreme ultraviolet lithography resists

Differential hardmasks for modulation of electrobucket sensitivity

Bottom-up fill dielectric materials for semiconductor structure fabrication and their methods of fabrication

Photobucket floor colors with selective grafting

Additives to improve the performance of a precursor source for cobalt deposition

Subtractively patterned interconnect structures for integrated circuits

Lined photobucket structure for back end of line (BEOL) interconnect formation

Activation of protected cross-linking catalysts during formation of dielectric materials

Hardened plug for improved shorting margin

Two-stage bake photoresist with releasable quencher

Carbon-based dielectric materials for semiconductor structure fabrication and the resulting structures

Selective etching and controlled atomic layer etching of transition metal oxide films for device fabrication

Triblock copolymers for self-aligning vias or contacts

Configurable resistor

Surface-aligned lithographic patterning approaches for back end of line (BEOL) interconnect fabrication

Structures and methods for improved lithographic processing

Non-lithographically patterned directed self assembly alignment promotion layers

Cyclic carbosilane dielectric films

Interconnect structure surface modifications by passivating agents

BRISTOL ROBERT L

Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects

Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects

MICHALAK DAVID J

Cyclic carbosilane dielectric films

Chemically altered carbosilanes for pore sealing applications

BLACKWELL JAMES M

Method of forming a metal from a cobalt metal precursor

MASSACHUSETTS INST TECHNOLOGY

Formation of enediynes by reductive coupling followed by alkyne metathesis