Inventor

MUSHIGA MITSUTERU

JP26 patents

⚠️ This page may combine multiple inventors who share the name “MUSHIGA MITSUTERU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MUSHIGA MITSUTERU

SANDISK TECHNOLOGIES LLC

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same

Three-dimensional device with bonded structures including a support die and methods of making the same

Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same

Three-dimensional memory device containing drain select isolation structures and on-pitch channels and methods of making the same without an etch stop layer

Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings

Three-dimensional memory device with through-stack contact via structures and method of making thereof

Three-dimensional memory device with separated source-side lines and method of making the same

Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the same

Three-dimensional device with bonded structures including a support die and methods of making the same

Three-dimensional memory device containing through-memory-level contact via structures and method of making the same

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Three-dimensional memory device having double-width staircase regions and methods of manufacturing the same

Three-dimensional ReRAM memory device employing replacement word lines and methods of making the same

Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same

Three-dimensional memory device with separated source-side lines and method of making the same

Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same

Three-dimensional memory device containing a replacement buried source line and methods of making the same

Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes

Three-dimensional memory device containing a replacement buried source line and methods of making the same

Methods and apparatus for three-dimensional nonvolatile memory

Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the same

Three-dimensional device with bonded structures including a support die and methods of making the same

Bonded assembly containing conductive via structures extending through word lines in a staircase region and methods for making the same

FUJITSU LTD

Memory device with two ferroelectric capacitors per one cell