Inventor
FUKUSHI TETSUO
JP14 patents
⚠️ This page may combine multiple inventors who share the name “FUKUSHI TETSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
10 patentsUS10891986B2Jan 12, 2021
Semiconductor device
RENESAS ELECTRONICS CORP4 citations72
US9251886B2Feb 2, 2016
Semiconductor storage device
RENESAS ELECTRONICS CORP4 citations72
US12548617B2Feb 10, 2026
DRAM circuit
RENESAS ELECTRONICS CORP0 citations62
US8681577B2Mar 25, 2014
Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltage
RENESAS ELECTRONICS CORP2 citations62
US9251868B2Feb 2, 2016
Multilayered semiconductor device
RENESAS ELECTRONICS CORP2 citations61
US11710511B2Jul 25, 2023
Semiconductor device having a high-speed memory with stable operation
RENESAS ELECTRONICS CORP0 citations51
US9384788B2Jul 5, 2016
Multilayered semiconductor device
RENESAS ELECTRONICS CORP0 citations51
US9123391B2Sep 1, 2015
Semiconductor storage device
RENESAS ELECTRONICS CORP1 citations51
US8811103B2Aug 19, 2014
Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltage
RENESAS ELECTRONICS CORP0 citations51
US9847108B2Dec 19, 2017
Semiconductor storage device
RENESAS ELECTRONICS CORP0 citations50
TAKAHASHI HIROYUKI
2 patentsUS8279691B2Oct 2, 2012
Semiconductor memory integrated device with a precharge circuit having thin-film transistors gated by a voltage higher than a power supply voltage
TAKAHASHI HIROYUKI10 citations83
US8482999B2Jul 9, 2013
Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltage
TAKAHASHI HIROYUKI2 citations62