Inventor
MITSUI KATSUYOSHI
JP35 patents
⚠️ This page may combine multiple inventors who share the name “MITSUI KATSUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
23 patentsUS5480838AJan 2, 1996
Method of manufacturing a semiconductor device having vertical transistor with tubular double-gate
MITSUBISHI ELECTRIC CORP132 citations99
US5382816AJan 17, 1995
Semiconductor device having vertical transistor with tubular double-gate
MITSUBISHI ELECTRIC CORP121 citations99
US6297624B1Oct 2, 2001
Semiconductor device having an internal voltage generating circuit
MITSUBISHI ELECTRIC CORP110 citations98
US6229753B1May 8, 2001
Semiconductor memory device capable of accurate control of internally produced power supply potential
MITSUBISHI ELECTRIC CORP120 citations98
US5217910AJun 8, 1993
Method of fabricating semiconductor device having sidewall spacers and oblique implantation
MITSUBISHI ELECTRIC CORP199 citations98
US5174881ADec 29, 1992
Apparatus for forming a thin film on surface of semiconductor substrate
MITSUBISHI ELECTRIC CORP448 citations98
US6492863B2Dec 10, 2002
Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element therefor
MITSUBISHI ELECTRIC CORP38 citations96
US6201437B1Mar 13, 2001
Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element therefor
MITSUBISHI ELECTRIC CORP49 citations96
US5999009ADec 7, 1999
Semiconductor integrated circuit with an internal voltage generating circuit requiring a reduced occupied area
MITSUBISHI ELECTRIC CORP56 citations96
US5296401AMar 22, 1994
MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof
MITSUBISHI ELECTRIC CORP79 citations96
US5183771AFeb 2, 1993
Method of manufacturing lddfet having double sidewall spacers
MITSUBISHI ELECTRIC CORP50 citations96
US5146291ASep 8, 1992
MIS device having lightly doped drain structure
MITSUBISHI ELECTRIC CORP91 citations96
US5378923AJan 3, 1995
Semiconductor device including a field effect transistor
MITSUBISHI ELECTRIC CORP20 citations93
US5217913AJun 8, 1993
Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers
MITSUBISHI ELECTRIC CORP48 citations92
US5089865AFeb 18, 1992
Mis semiconductor device
MITSUBISHI ELECTRIC CORP29 citations92
US6121806ASep 19, 2000
Circuit for adjusting a voltage level in a semiconductor device
MITSUBISHI ELECTRIC CORP16 citations84
US6377074B1Apr 23, 2002
Semiconductor device having a constant-current source circuit
MITSUBISHI ELECTRIC CORP8 citations74
US6333880B1Dec 25, 2001
Semiconductor memory device capable of detecting high-voltage test command signal
MITSUBISHI ELECTRIC CORP7 citations74
US6262931B1Jul 17, 2001
Semiconductor memory device having voltage down convertor reducing current consumption
MITSUBISHI ELECTRIC CORP10 citations74
US6195298B1Feb 27, 2001
Semiconductor integrated circuit capable of rapidly rewriting data into memory cells
MITSUBISHI ELECTRIC CORP14 citations74
US6091648AJul 18, 2000
Voltage generating circuit for semiconductor integrated circuit device
MITSUBISHI ELECTRIC CORP11 citations74
US5075240ADec 24, 1991
Semiconductor device manufactured by using conductive ion implantation mask
MITSUBISHI ELECTRIC CORP8 citations73
US6603695B2Aug 5, 2003
Semiconductor memory device having self-refresh mode
MITSUBISHI ELECTRIC CORP2 citations63
RENESAS TECH CORP
7 patentsUS6714065B2Mar 30, 2004
Semiconductor device including power supply circuit conducting charge pumping operation
RENESAS TECH CORP68 citations96
US6937088B2Aug 30, 2005
Potential generating circuit capable of correctly controlling output potential
RENESAS TECH CORP19 citations93
US6781443B2Aug 24, 2004
Potential generating circuit capable of correctly controlling output potential
RENESAS TECH CORP38 citations93
US6753720B2Jun 22, 2004
Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element therefor
RENESAS TECH CORP26 citations93
US6765432B2Jul 20, 2004
Semiconductor device with a low-power operation mode
RENESAS TECH CORP9 citations74
US7728678B2Jun 1, 2010
Semiconductor device outputting oscillation signal
RENESAS TECH CORP3 citations63
US6812748B2Nov 2, 2004
Semiconductor device having substrate potential detection circuit less influenced by change in manufacturing conditions
RENESAS TECH CORP0 citations42