P

Inventor

MITSUI KATSUYOSHI

JP35 patents
⚠️ This page may combine multiple inventors who share the name “MITSUI KATSUYOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

23 patents
US5480838AJan 2, 1996

Method of manufacturing a semiconductor device having vertical transistor with tubular double-gate

MITSUBISHI ELECTRIC CORP132 citations99
US5382816AJan 17, 1995

Semiconductor device having vertical transistor with tubular double-gate

MITSUBISHI ELECTRIC CORP121 citations99
US6297624B1Oct 2, 2001

Semiconductor device having an internal voltage generating circuit

MITSUBISHI ELECTRIC CORP110 citations98
US6229753B1May 8, 2001

Semiconductor memory device capable of accurate control of internally produced power supply potential

MITSUBISHI ELECTRIC CORP120 citations98
US5217910AJun 8, 1993

Method of fabricating semiconductor device having sidewall spacers and oblique implantation

MITSUBISHI ELECTRIC CORP199 citations98
US5174881ADec 29, 1992

Apparatus for forming a thin film on surface of semiconductor substrate

MITSUBISHI ELECTRIC CORP448 citations98
US6492863B2Dec 10, 2002

Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element therefor

MITSUBISHI ELECTRIC CORP38 citations96
US6201437B1Mar 13, 2001

Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element therefor

MITSUBISHI ELECTRIC CORP49 citations96
US5999009ADec 7, 1999

Semiconductor integrated circuit with an internal voltage generating circuit requiring a reduced occupied area

MITSUBISHI ELECTRIC CORP56 citations96
US5296401AMar 22, 1994

MIS device having p channel MOS device and n channel MOS device with LDD structure and manufacturing method thereof

MITSUBISHI ELECTRIC CORP79 citations96
US5183771AFeb 2, 1993

Method of manufacturing lddfet having double sidewall spacers

MITSUBISHI ELECTRIC CORP50 citations96
US5146291ASep 8, 1992

MIS device having lightly doped drain structure

MITSUBISHI ELECTRIC CORP91 citations96
US5378923AJan 3, 1995

Semiconductor device including a field effect transistor

MITSUBISHI ELECTRIC CORP20 citations93
US5217913AJun 8, 1993

Method of manufacturing an MIS device having lightly doped drain structure and conductive sidewall spacers

MITSUBISHI ELECTRIC CORP48 citations92
US5089865AFeb 18, 1992

Mis semiconductor device

MITSUBISHI ELECTRIC CORP29 citations92
US6121806ASep 19, 2000

Circuit for adjusting a voltage level in a semiconductor device

MITSUBISHI ELECTRIC CORP16 citations84
US6377074B1Apr 23, 2002

Semiconductor device having a constant-current source circuit

MITSUBISHI ELECTRIC CORP8 citations74
US6333880B1Dec 25, 2001

Semiconductor memory device capable of detecting high-voltage test command signal

MITSUBISHI ELECTRIC CORP7 citations74
US6262931B1Jul 17, 2001

Semiconductor memory device having voltage down convertor reducing current consumption

MITSUBISHI ELECTRIC CORP10 citations74
US6195298B1Feb 27, 2001

Semiconductor integrated circuit capable of rapidly rewriting data into memory cells

MITSUBISHI ELECTRIC CORP14 citations74
US6091648AJul 18, 2000

Voltage generating circuit for semiconductor integrated circuit device

MITSUBISHI ELECTRIC CORP11 citations74
US5075240ADec 24, 1991

Semiconductor device manufactured by using conductive ion implantation mask

MITSUBISHI ELECTRIC CORP8 citations73
US6603695B2Aug 5, 2003

Semiconductor memory device having self-refresh mode

MITSUBISHI ELECTRIC CORP2 citations63

RENESAS TECH CORP

7 patents

OISHI TSUKASA

2 patents

MITSUBISHKI DENKI KABUSHIKI KA

1 patent

MITSUBISHI DENKI KABUSHIKI K

1 patent

RENESAS ELECTRONICS CORP

1 patent