P

Inventor

AKARVARDAR MURAT KEREM

TW51 patents
⚠️ This page may combine multiple inventors who share the name “AKARVARDAR MURAT KEREM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GLOBALFOUNDRIES INC

43 patents
US9929157B1Mar 27, 2018

Tall single-fin fin-type field effect transistor structures and methods

GLOBALFOUNDRIES INC37 citations94
US9343300B1May 17, 2016

Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region

GLOBALFOUNDRIES INC45 citations94
US9165837B1Oct 20, 2015

Method to form defect free replacement fins by H2 anneal

GLOBALFOUNDRIES INC35 citations94
US9147616B1Sep 29, 2015

Methods of forming isolated fins for a FinFET semiconductor device with alternative channel materials

GLOBALFOUNDRIES INC16 citations93
US9716174B2Jul 25, 2017

Electrical isolation of FinFET active region by selective oxidation of sacrificial layer

GLOBALFOUNDRIES INC10 citations84
US9601383B1Mar 21, 2017

FinFET fabrication by forming isolation trenches prior to fin formation

GLOBALFOUNDRIES INC9 citations84
US9576857B1Feb 21, 2017

Method and structure for SRB elastic relaxation

GLOBALFOUNDRIES INC14 citations84
US9324617B1Apr 26, 2016

Methods of forming elastically relaxed SiGe virtual substrates on bulk silicon

GLOBALFOUNDRIES INC9 citations84
US9224865B2Dec 29, 2015

FinFET with insulator under channel

GLOBALFOUNDRIES INC13 citations84
US9117875B2Aug 25, 2015

Methods of forming isolated germanium-containing fins for a FinFET semiconductor device

GLOBALFOUNDRIES INC14 citations84
US9006077B2Apr 14, 2015

Gate length independent silicon-on-nothing (SON) scheme for bulk FinFETs

GLOBALFOUNDRIES INC14 citations84
US10297597B2May 21, 2019

Composite isolation structures for a fin-type field effect transistor

GLOBALFOUNDRIES INC5 citations73
US10062617B2Aug 28, 2018

Method and structure for SRB elastic relaxation

GLOBALFOUNDRIES INC3 citations73
US9589849B2Mar 7, 2017

Methods of modulating strain in PFET and NFET FinFET semiconductor devices

GLOBALFOUNDRIES INC3 citations73
US9570588B2Feb 14, 2017

Methods of forming transistor structures including forming channel material after formation processes to prevent damage to the channel material

GLOBALFOUNDRIES INC4 citations73
US9530869B2Dec 27, 2016

Methods of forming embedded source/drain regions on finFET devices

GLOBALFOUNDRIES INC3 citations73
US9515088B1Dec 6, 2016

High density and modular CMOS logic based on 3D stacked, independent-gate, junctionless FinFETs

GLOBALFOUNDRIES INC3 citations73
US9362361B1Jun 7, 2016

Methods of forming elastically relaxed SiGe virtual substrates on bulk silicon

GLOBALFOUNDRIES INC5 citations73
US9324618B1Apr 26, 2016

Methods of forming replacement fins for a FinFET device

GLOBALFOUNDRIES INC3 citations73
US9245980B2Jan 26, 2016

Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device

GLOBALFOUNDRIES INC6 citations73
US9847333B2Dec 19, 2017

Reducing risk of punch-through in FinFET semiconductor structure

GLOBALFOUNDRIES INC4 citations71
US9882052B2Jan 30, 2018

Forming defect-free relaxed SiGe fins

GLOBALFOUNDRIES INC2 citations68
US9508848B1Nov 29, 2016

Methods of forming strained channel regions on FinFET devices by performing a heating process on a heat-expandable material

GLOBALFOUNDRIES INC2 citations63
US9502507B1Nov 22, 2016

Methods of forming strained channel regions on FinFET devices

GLOBALFOUNDRIES INC2 citations63
US9425315B2Aug 23, 2016

FinFET semiconductor device with isolated fins made of alternative channel materials

GLOBALFOUNDRIES INC2 citations63
US9406803B2Aug 2, 2016

FinFET device including a uniform silicon alloy fin

GLOBALFOUNDRIES INC2 citations63
US9312387B2Apr 12, 2016

Methods of forming FinFET devices with alternative channel materials

GLOBALFOUNDRIES INC2 citations63
US9305846B2Apr 5, 2016

Device isolation in FinFET CMOS

GLOBALFOUNDRIES INC2 citations63
US10411010B2Sep 10, 2019

Tall single-fin FIN-type field effect transistor structures and methods

GLOBALFOUNDRIES INC1 citations62
US10163677B2Dec 25, 2018

Electrically insulated fin structure(s) with alternative channel materials and fabrication methods

GLOBALFOUNDRIES INC0 citations52
US9881830B2Jan 30, 2018

Electrically insulated fin structure(s) with alternative channel materials and fabrication methods

GLOBALFOUNDRIES INC1 citations52
US9337022B1May 10, 2016

Virtual relaxed substrate on edge-relaxed composite semiconductor pillars

GLOBALFOUNDRIES INC0 citations52
US9184162B2Nov 10, 2015

FinFET integrated circuits and methods for their fabrication

GLOBALFOUNDRIES INC1 citations52
US8987094B2Mar 24, 2015

FinFET integrated circuits and methods for their fabrication

GLOBALFOUNDRIES INC0 citations52
US9190411B2Nov 17, 2015

Retrograde doped layer for device isolation

GLOBALFOUNDRIES INC1 citations51
US9076842B2Jul 7, 2015

Fin pitch scaling and active layer isolation

GLOBALFOUNDRIES INC0 citations51
US9679972B1Jun 13, 2017

Thin strain relaxed buffers with multilayer film stacks

GLOBALFOUNDRIES INC0 citations45
US10026659B2Jul 17, 2018

Methods of forming fin isolation regions under tensile-strained fins on FinFET semiconductor devices

GLOBALFOUNDRIES INC0 citations42
US9960257B2May 1, 2018

Common fabrication of multiple FinFETs with different channel heights

GLOBALFOUNDRIES INC0 citations42
US9590040B2Mar 7, 2017

Methods of forming fins for a FinFET device by forming and replacing sacrificial fin structures with alternative materials

GLOBALFOUNDRIES INC0 citations42
US9536990B2Jan 3, 2017

Methods of forming replacement fins for a FinFET device using a targeted thickness for the patterned fin etch mask

GLOBALFOUNDRIES INC0 citations42
US9455140B2Sep 27, 2016

Methods of forming doped epitaxial SiGe material on semiconductor devices

GLOBALFOUNDRIES INC0 citations42
US9425289B2Aug 23, 2016

Methods of forming alternative channel materials on FinFET semiconductor devices

GLOBALFOUNDRIES INC0 citations42

TAIWAN SEMICONDUCTOR MFG CO LTD

5 patents

IBM

2 patents

Showing the top 50 of 51 patents by PatentIndex Score.