Inventor
ABERNATHEY JOHN R
US7 patents
Patents
7 patentsUS5219788AJun 15, 1993
Bilayer metallization cap for photolithography
IBM425 citations97
US4755478AJul 5, 1988
Method of forming metal-strapped polysilicon gate electrode for FET device
IBM106 citations96
US4601779AJul 22, 1986
Method of producing a thin silicon-on-insulator layer
IBM123 citations95
US4649627AMar 17, 1987
Method of fabricating silicon-on-insulator transistors with a shared element
IBM55 citations92
US5453400ASep 26, 1995
Method and structure for interconnecting different polysilicon zones on semiconductor substrates for integrated circuits
IBM20 citations89
US4725560AFeb 16, 1988
Silicon oxynitride storage node dielectric
IBM42 citations89
US4556585ADec 3, 1985
Vertically isolated complementary transistors
IBM11 citations73