Inventor
SUWA MAKOTO
JP27 patents
⚠️ This page may combine multiple inventors who share the name “SUWA MAKOTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
18 patentsUS5574729ANov 12, 1996
Redundancy circuit for repairing defective bits in semiconductor memory device
MITSUBISHI ELECTRIC CORP63 citations96
US5357478AOct 18, 1994
Semiconductor integrated circuit device including a plurality of cell array blocks
MITSUBISHI ELECTRIC CORP97 citations96
US6625050B2Sep 23, 2003
Semiconductor memory device adaptable to various types of packages
MITSUBISHI ELECTRIC CORP59 citations95
US5281842AJan 25, 1994
Dynamic random access memory with isolated well structure
MITSUBISHI ELECTRIC CORP34 citations93
US5204837AApr 20, 1993
Semiconductor memory device having test mode
MITSUBISHI ELECTRIC CORP34 citations93
US5537351AJul 16, 1996
Semiconductor memory device carrying out input and output of data in a predetermined bit organization
MITSUBISHI ELECTRIC CORP26 citations92
US5519243AMay 21, 1996
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP27 citations92
US5384784AJan 24, 1995
Semiconductor memory device comprising a test circuit and a method of operation thereof
MITSUBISHI ELECTRIC CORP42 citations92
US5323348AJun 21, 1994
Semiconductor memory device having multiple memory arrays and including redundancy circuit for repairing a faulty bit
MITSUBISHI ELECTRIC CORP23 citations92
US5337272AAug 9, 1994
Circuit for applying selected voltages to dynamic random access memory
MITSUBISHI ELECTRIC CORP17 citations82
US5903033AMay 11, 1999
Semiconductor device including resistance element with superior noise immunity
MITSUBISHI ELECTRIC CORP10 citations74
US5736894AApr 7, 1998
Semiconductor device and method of adjusting internal power supply potential of the semiconductor device
MITSUBISHI ELECTRIC CORP8 citations74
US5668762ASep 16, 1997
Semiconductor memory device allowing reduction of power consumed in a shared sense amplifier type sense amplifier
MITSUBISHI ELECTRIC CORP10 citations74
US5157630AOct 20, 1992
Semiconductor memory which can be prevented from shifting to undesired operation mode
MITSUBISHI ELECTRIC CORP10 citations74
US5079743AJan 7, 1992
Circuit for applying selected voltages to dynamic random access memory
MITSUBISHI ELECTRIC CORP9 citations74
US4833654AMay 23, 1989
Method of and circuitry for generating staggered restore timing signals in block partitioned DRAM
MITSUBISHI ELECTRIC CORP7 citations74
USRE35613ESep 23, 1997
Dynamic random access memory with isolated well structure
MITSUBISHI ELECTRIC CORP5 citations63
US5321654AJun 14, 1994
Semiconductor device having no through current flow in standby period
MITSUBISHI ELECTRIC CORP3 citations63
RENESAS TECH CORP
7 patentsUS6954103B2Oct 11, 2005
Semiconductor device having internal voltage generated stably
RENESAS TECH CORP34 citations92
US6873563B2Mar 29, 2005
Semiconductor circuit device adaptable to plurality of types of packages
RENESAS TECH CORP50 citations92
US6813210B2Nov 2, 2004
Semiconductor memory device requiring refresh operation
RENESAS TECH CORP24 citations92
US6784718B2Aug 31, 2004
Semiconductor device adaptable to a plurality of kinds of interfaces
RENESAS TECH CORP22 citations92
US6724223B2Apr 20, 2004
Semiconductor device used in two systems having different power supply voltages
RENESAS TECH CORP26 citations92
US6724679B2Apr 20, 2004
Semiconductor memory device allowing high density structure or high performance
RENESAS TECH CORP15 citations83
US6775177B2Aug 10, 2004
Semiconductor memory device switchable to twin memory cell configuration
RENESAS TECH CORP11 citations73