Inventor
TAKENAKA TAKAO
JP21 patents
⚠️ This page may combine multiple inventors who share the name “TAKENAKA TAKAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SHINETSU HANDOTAI KK
19 patentsUS5739553AApr 14, 1998
Algainp light-emitting device
SHINETSU HANDOTAI KK21 citations92
US5600158AFeb 4, 1997
Semiconductor light emitting device with current spreading layer
SHINETSU HANDOTAI KK19 citations92
US5442203AAug 15, 1995
Semiconductor light emitting device having AlGaAsP light reflecting layers
SHINETSU HANDOTAI KK36 citations92
US5362683ANov 8, 1994
Method of making epitaxial wafers
SHINETSU HANDOTAI KK36 citations92
US5323027AJun 21, 1994
Light emitting device with double heterostructure
SHINETSU HANDOTAI KK22 citations92
US5612539AMar 18, 1997
Method of evaluating lifetime related quality of semiconductor surface
SHINETSU HANDOTAI KK11 citations73
US5444269AAug 22, 1995
AlGaInP light emitting device
SHINETSU HANDOTAI KK11 citations73
US5442201AAug 15, 1995
Semiconductor light emitting device with nitrogen doping
SHINETSU HANDOTAI KK9 citations73
US5302832AApr 12, 1994
Method for evaluation of spatial distribution of deep level concentration in semiconductor crystal
SHINETSU HANDOTAI KK9 citations73
US5254172AOct 19, 1993
Rotating furnace tube having a non-rotating slidable work holder for processing semiconductor substrates
SHINETSU HANDOTAI KK13 citations72
US5386118AJan 31, 1995
Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal
SHINETSU HANDOTAI KK10 citations71
US5209811AMay 11, 1993
Method for heat-treating gallium arsenide monocrystals
SHINETSU HANDOTAI KK7 citations71
US5598452AJan 28, 1997
Method of evaluating a silicon single crystal
SHINETSU HANDOTAI KK7 citations69
US5585305ADec 17, 1996
Method for fabricating a semiconductor device
SHINETSU HANDOTAI KK3 citations63
US5597761AJan 28, 1997
Semiconductor light emitting device and methods of manufacturing it
SHINETSU HANDOTAI KK2 citations62
US5533387AJul 9, 1996
Method of evaluating silicon wafers
SHINETSU HANDOTAI KK6 citations62
US5366552ANov 22, 1994
Apparatus for liquid-phase epitaxial growth
SHINETSU HANDOTAI KK4 citations62
US5228927AJul 20, 1993
Method for heat-treating gallium arsenide monocrystals
SHINETSU HANDOTAI KK5 citations60
US4905058AFeb 27, 1990
Light-emitting semiconductor device
SHINETSU HANDOTAI KK6 citations60