P

Inventor

MOROOKA YOSHIKAZU

JP28 patents
⚠️ This page may combine multiple inventors who share the name “MOROOKA YOSHIKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

25 patents
US5963502AOct 5, 1999

Clock-synchronous type semiconductor memory device capable of outputting read clock signal at correct timing

MITSUBISHI ELECTRIC CORP175 citations99
US5994934ANov 30, 1999

Delay locked loop circuit

MITSUBISHI ELECTRIC CORP142 citations98
US6392897B1May 21, 2002

Circuit module

MITSUBISHI ELECTRIC CORP66 citations96
US6101151AAug 8, 2000

Synchronous semiconductor memory device employing temporary data output stop scheme

MITSUBISHI ELECTRIC CORP68 citations96
US5574729ANov 12, 1996

Redundancy circuit for repairing defective bits in semiconductor memory device

MITSUBISHI ELECTRIC CORP63 citations96
US5357478AOct 18, 1994

Semiconductor integrated circuit device including a plurality of cell array blocks

MITSUBISHI ELECTRIC CORP97 citations96
US5200925AApr 6, 1993

Serial access semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP93 citations96
US6421291B1Jul 16, 2002

Semiconductor memory device having high data input/output frequency and capable of efficiently testing circuit associated with data input/output

MITSUBISHI ELECTRIC CORP34 citations93
US6304502B1Oct 16, 2001

Semiconductor memory device connected to memory controller and memory system employing the same

MITSUBISHI ELECTRIC CORP26 citations93
US5995435ANov 30, 1999

Semiconductor memory device having controllable supplying capability of internal voltage

MITSUBISHI ELECTRIC CORP19 citations93
US5926837AJul 20, 1999

Memory system capable of reducing timing skew between clock signal and data

MITSUBISHI ELECTRIC CORP24 citations93
US5841705ANov 24, 1998

Semiconductor memory device having controllable supplying capability of internal voltage

MITSUBISHI ELECTRIC CORP19 citations93
US5699303ADec 16, 1997

Semiconductor memory device having controllable supplying capability of internal voltage

MITSUBISHI ELECTRIC CORP21 citations93
US5404329AApr 4, 1995

Boosting circuit improved to operate in a wider range of power supply voltage, and a semiconductor memory and a semiconductor integrated circuit device using the same

MITSUBISHI ELECTRIC CORP29 citations93
US6160434ADec 12, 2000

Ninety-degree phase shifter

MITSUBISHI ELECTRIC CORP23 citations92
US5586076ADec 17, 1996

Semiconductor memory device permitting high speed data transfer and high density integration

MITSUBISHI ELECTRIC CORP40 citations92
US5537351AJul 16, 1996

Semiconductor memory device carrying out input and output of data in a predetermined bit organization

MITSUBISHI ELECTRIC CORP26 citations92
US5384784AJan 24, 1995

Semiconductor memory device comprising a test circuit and a method of operation thereof

MITSUBISHI ELECTRIC CORP42 citations92
US5323348AJun 21, 1994

Semiconductor memory device having multiple memory arrays and including redundancy circuit for repairing a faulty bit

MITSUBISHI ELECTRIC CORP23 citations92
US5481496AJan 2, 1996

Semiconductor memory device and method of data transfer therefor

MITSUBISHI ELECTRIC CORP14 citations74
US5469402ANov 21, 1995

Buffer circuit of a semiconductor memory device

MITSUBISHI ELECTRIC CORP8 citations74
US4734889AMar 29, 1988

Semiconductor memory

MITSUBISHI ELECTRIC CORP13 citations74
US5481497AJan 2, 1996

Semiconductor memory device providing external output data signal in accordance with states of true and complementary read buses

MITSUBISHI ELECTRIC CORP16 citations73
US5321654AJun 14, 1994

Semiconductor device having no through current flow in standby period

MITSUBISHI ELECTRIC CORP3 citations63
US4641281AFeb 3, 1987

Dynamic random access memory with hidden refresh control

MITSUBISHI ELECTRIC CORP1 citations52

RENESAS TECH CORP

2 patents

ADVANCED MEMORY INTERNATIONAL

1 patent