Inventor
MOROOKA YOSHIKAZU
JP28 patents
⚠️ This page may combine multiple inventors who share the name “MOROOKA YOSHIKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
25 patentsUS5963502AOct 5, 1999
Clock-synchronous type semiconductor memory device capable of outputting read clock signal at correct timing
MITSUBISHI ELECTRIC CORP175 citations99
US5994934ANov 30, 1999
Delay locked loop circuit
MITSUBISHI ELECTRIC CORP142 citations98
US6392897B1May 21, 2002
Circuit module
MITSUBISHI ELECTRIC CORP66 citations96
US6101151AAug 8, 2000
Synchronous semiconductor memory device employing temporary data output stop scheme
MITSUBISHI ELECTRIC CORP68 citations96
US5574729ANov 12, 1996
Redundancy circuit for repairing defective bits in semiconductor memory device
MITSUBISHI ELECTRIC CORP63 citations96
US5357478AOct 18, 1994
Semiconductor integrated circuit device including a plurality of cell array blocks
MITSUBISHI ELECTRIC CORP97 citations96
US5200925AApr 6, 1993
Serial access semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP93 citations96
US6421291B1Jul 16, 2002
Semiconductor memory device having high data input/output frequency and capable of efficiently testing circuit associated with data input/output
MITSUBISHI ELECTRIC CORP34 citations93
US6304502B1Oct 16, 2001
Semiconductor memory device connected to memory controller and memory system employing the same
MITSUBISHI ELECTRIC CORP26 citations93
US5995435ANov 30, 1999
Semiconductor memory device having controllable supplying capability of internal voltage
MITSUBISHI ELECTRIC CORP19 citations93
US5926837AJul 20, 1999
Memory system capable of reducing timing skew between clock signal and data
MITSUBISHI ELECTRIC CORP24 citations93
US5841705ANov 24, 1998
Semiconductor memory device having controllable supplying capability of internal voltage
MITSUBISHI ELECTRIC CORP19 citations93
US5699303ADec 16, 1997
Semiconductor memory device having controllable supplying capability of internal voltage
MITSUBISHI ELECTRIC CORP21 citations93
US5404329AApr 4, 1995
Boosting circuit improved to operate in a wider range of power supply voltage, and a semiconductor memory and a semiconductor integrated circuit device using the same
MITSUBISHI ELECTRIC CORP29 citations93
US6160434ADec 12, 2000
Ninety-degree phase shifter
MITSUBISHI ELECTRIC CORP23 citations92
US5586076ADec 17, 1996
Semiconductor memory device permitting high speed data transfer and high density integration
MITSUBISHI ELECTRIC CORP40 citations92
US5537351AJul 16, 1996
Semiconductor memory device carrying out input and output of data in a predetermined bit organization
MITSUBISHI ELECTRIC CORP26 citations92
US5384784AJan 24, 1995
Semiconductor memory device comprising a test circuit and a method of operation thereof
MITSUBISHI ELECTRIC CORP42 citations92
US5323348AJun 21, 1994
Semiconductor memory device having multiple memory arrays and including redundancy circuit for repairing a faulty bit
MITSUBISHI ELECTRIC CORP23 citations92
US5481496AJan 2, 1996
Semiconductor memory device and method of data transfer therefor
MITSUBISHI ELECTRIC CORP14 citations74
US5469402ANov 21, 1995
Buffer circuit of a semiconductor memory device
MITSUBISHI ELECTRIC CORP8 citations74
US4734889AMar 29, 1988
Semiconductor memory
MITSUBISHI ELECTRIC CORP13 citations74
US5481497AJan 2, 1996
Semiconductor memory device providing external output data signal in accordance with states of true and complementary read buses
MITSUBISHI ELECTRIC CORP16 citations73
US5321654AJun 14, 1994
Semiconductor device having no through current flow in standby period
MITSUBISHI ELECTRIC CORP3 citations63
US4641281AFeb 3, 1987
Dynamic random access memory with hidden refresh control
MITSUBISHI ELECTRIC CORP1 citations52