Inventor

KINOSHITA MITSUYA

JP31 patents

⚠️ This page may combine multiple inventors who share the name “KINOSHITA MITSUYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KINOSHITA MITSUYA

MITSUBISHI ELECTRIC CORP

Multi-bank clock synchronous type semiconductor memory device having improved memory array and power supply arrangement

Semiconductor memory device capable of increasing chip yields while maintaining rapid operation

Redundancy circuit for repairing defective bits in semiconductor memory device

Semiconductor integrated circuit device including a plurality of cell array blocks

Associative memory having simplified memory cell circuitry

Voltage down converter allowing supply of stable internal power supply voltage

Semiconductor device for multiple packaging configurations

Semiconductor device and a method of manufacturing thereof

High speed operable semiconductor memory device with memory blocks arranged about the center

Semiconductor device and a method of manufacturing thereof

Voltage generation circuit capable of supplying stable power supply voltage to load operating in response to timing signal

High speed operable semiconductor memory device with memory blocks arranged about the center

Method of forming a semiconductor memory device having a contact region between memory cell and an interlayer insolating layer

Semiconductor device having redundant circuit

Semiconductor memory device with contact region intermediate memory cell and peripheral circuit

Semiconductor memory device comprising a test circuit and a method of operation thereof

Semiconductor memory device having multiple memory arrays and including redundancy circuit for repairing a faulty bit

Semiconductor memory device

Semiconductor memory device capable of performing stable operation for noise while preventing increase in chip area

Semiconductor memory device and method of manufacturing the same

Semiconductor memory device having cylindrical capacitor and manufacturing method thereof

Method for producing a semiconductor integrated circuit device in which circuit functions can be remedied or changed

Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same

Method of manufacturing a semiconductor device having a cylindrical capacitor

Semiconductor device having no through current flow in standby period

RENESAS TECH CORP

Test circuit capable of testing embedded memory with reliability

Multi-bit test circuit

Semiconductor memory device with reduced power consumption

Semiconductor memory device with circuit executing burn-in testing

Semiconductor memory device having self-precharge function

KINOSHITA MITSUYA

Semiconductor device including chip with complementary I/O cells