Inventor
KIKUDA SHIGERU
JP21 patents
⚠️ This page may combine multiple inventors who share the name “KIKUDA SHIGERU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
19 patentsUS6166415ADec 26, 2000
Semiconductor device with improved noise resistivity
MITSUBISHI ELECTRIC CORP173 citations98
US5574729ANov 12, 1996
Redundancy circuit for repairing defective bits in semiconductor memory device
MITSUBISHI ELECTRIC CORP63 citations96
US5357478AOct 18, 1994
Semiconductor integrated circuit device including a plurality of cell array blocks
MITSUBISHI ELECTRIC CORP97 citations96
US6301169B1Oct 9, 2001
Semiconductor memory device with IO compression test mode
MITSUBISHI ELECTRIC CORP31 citations92
US5903575AMay 11, 1999
Semiconductor memory device having fast data writing mode and method of writing testing data in fast data writing mode
MITSUBISHI ELECTRIC CORP32 citations92
US5586076ADec 17, 1996
Semiconductor memory device permitting high speed data transfer and high density integration
MITSUBISHI ELECTRIC CORP40 citations92
US5519243AMay 21, 1996
Semiconductor device and manufacturing method thereof
MITSUBISHI ELECTRIC CORP27 citations92
US5384784AJan 24, 1995
Semiconductor memory device comprising a test circuit and a method of operation thereof
MITSUBISHI ELECTRIC CORP42 citations92
US5323348AJun 21, 1994
Semiconductor memory device having multiple memory arrays and including redundancy circuit for repairing a faulty bit
MITSUBISHI ELECTRIC CORP23 citations92
US5227997AJul 13, 1993
Semiconductor circuit device having multiplex selection functions
MITSUBISHI ELECTRIC CORP22 citations92
US5146429ASep 8, 1992
Semiconductor memory device including a redundancy circuitry for repairing a defective memory cell and a method for repairing a defective memory cell
MITSUBISHI ELECTRIC CORP37 citations92
US5063313ANov 5, 1991
Delay circuit employing different threshold fet's
MITSUBISHI ELECTRIC CORP25 citations92
US4931668AJun 5, 1990
MIS transistor driven inverter circuit capable of individually controlling rising portion and falling portion of output waveform
MITSUBISHI ELECTRIC CORP26 citations92
US5448516ASep 5, 1995
Semiconductor memory device suitable for high integration
MITSUBISHI ELECTRIC CORP18 citations74
US4994689AFeb 19, 1991
Semiconductor integrated circuit device
MITSUBISHI ELECTRIC CORP10 citations74
US4914326AApr 3, 1990
Delay circuit
MITSUBISHI ELECTRIC CORP8 citations74
US4879679ANov 7, 1989
Dynamic random access memory having storage gate electrode grounding means
MITSUBISHI ELECTRIC CORP17 citations74
US6091651AJul 18, 2000
Semiconductor memory device with improved test efficiency
MITSUBISHI ELECTRIC CORP4 citations63
US5321654AJun 14, 1994
Semiconductor device having no through current flow in standby period
MITSUBISHI ELECTRIC CORP3 citations63