P

Inventor

MARKS JEFFREY

US75 patents
⚠️ This page may combine multiple inventors who share the name “MARKS JEFFREY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

APPLIED MATERIALS INC

30 patents
US5888414AMar 30, 1999

Plasma reactor and processes using RF inductive coupling and scavenger temperature control

APPLIED MATERIALS INC203 citations99
US5423945AJun 13, 1995

Selectivity for etching an oxide over a nitride

APPLIED MATERIALS INC220 citations99
US6518195B1Feb 11, 2003

Plasma reactor using inductive RF coupling, and processes

APPLIED MATERIALS INC162 citations98
US6444137B1Sep 3, 2002

Method for processing substrates using gaseous silicon scavenger

APPLIED MATERIALS INC127 citations98
US6068784AMay 30, 2000

Process used in an RF coupled plasma reactor

APPLIED MATERIALS INC173 citations98
US5556501ASep 17, 1996

Silicon scavenger in an inductively coupled RF plasma reactor

APPLIED MATERIALS INC396 citations98
US5399237AMar 21, 1995

Etching titanium nitride using carbon-fluoride and carbon-oxide gas

APPLIED MATERIALS INC275 citations98
US5350479ASep 27, 1994

Electrostatic chuck for high power plasma processing

APPLIED MATERIALS INC199 citations98
US6545420B1Apr 8, 2003

Plasma reactor using inductive RF coupling, and processes

APPLIED MATERIALS INC135 citations97
US6488807B1Dec 3, 2002

Magnetic confinement in a plasma reactor having an RF bias electrode

APPLIED MATERIALS INC145 citations97
US6251792B1Jun 26, 2001

Plasma etch processes

APPLIED MATERIALS INC122 citations97
US6024826AFeb 15, 2000

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC100 citations97
US6218312B1Apr 17, 2001

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC61 citations96
US5770099AJun 23, 1998

Plasma etch apparatus with heated scavenging surfaces

APPLIED MATERIALS INC54 citations96
US5583737ADec 10, 1996

Electrostatic chuck usable in high density plasma

APPLIED MATERIALS INC57 citations96
US5477975ADec 26, 1995

Plasma etch apparatus with heated scavenging surfaces

APPLIED MATERIALS INC86 citations96
US5204288AApr 20, 1993

Method for planarizing an integrated circuit structure using low melting inorganic material

APPLIED MATERIALS INC67 citations96
US5899801AMay 4, 1999

Method and apparatus for removing a substrate from a polishing pad in a chemical mechanical polishing system

APPLIED MATERIALS INC65 citations95
US5539609AJul 23, 1996

Electrostatic chuck usable in high density plasma

APPLIED MATERIALS INC60 citations95
US6090303AJul 18, 2000

Process for etching oxides in an electromagnetically coupled planar plasma apparatus

APPLIED MATERIALS INC20 citations93
US5772832AJun 30, 1998

Process for etching oxides in an electromagnetically coupled planar plasma apparatus

APPLIED MATERIALS INC35 citations93
US5244841ASep 14, 1993

Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing

APPLIED MATERIALS INC39 citations93
US6440866B1Aug 27, 2002

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC22 citations92
US6399514B1Jun 4, 2002

High temperature silicon surface providing high selectivity in an oxide etch process

APPLIED MATERIALS INC30 citations92
US6280297B1Aug 28, 2001

Apparatus and method for distribution of slurry in a chemical mechanical polishing system

APPLIED MATERIALS INC24 citations92
US6194325B1Feb 27, 2001

Oxide etch process with high selectivity to nitride suitable for use on surfaces of uneven topography

APPLIED MATERIALS INC41 citations92
US6171974B1Jan 9, 2001

High selectivity oxide etch process for integrated circuit structures

APPLIED MATERIALS INC23 citations92
US6051499AApr 18, 2000

Apparatus and method for distribution of slurry in a chemical mechanical polishing system

APPLIED MATERIALS INC28 citations92
US6036877AMar 14, 2000

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC30 citations92
US5990017ANov 23, 1999

Plasma reactor with heated source of a polymer-hardening precursor material

APPLIED MATERIALS INC32 citations92

LAM RES CORP

20 patents
US9778561B2Oct 3, 2017

Vacuum-integrated hardmask processes and apparatus

LAM RES CORP380 citations99
US10831096B2Nov 10, 2020

Vacuum-integrated hardmask processes and apparatus

LAM RES CORP34 citations98
US9806252B2Oct 31, 2017

Dry plasma etch method to pattern MRAM stack

LAM RES CORP61 citations98
US7271107B2Sep 18, 2007

Reduction of feature critical dimensions using multiple masks

LAM RES CORP134 citations98
US9805941B2Oct 31, 2017

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

LAM RES CORP44 citations97
US9576811B2Feb 21, 2017

Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)

LAM RES CORP65 citations97
US9257638B2Feb 9, 2016

Method to etch non-volatile metal materials

LAM RES CORP55 citations97
US9130158B1Sep 8, 2015

Method to etch non-volatile metal materials

LAM RES CORP44 citations97
US12105422B2Oct 1, 2024

Photoresist development with halide chemistries

LAM RES CORP13 citations94
US11209729B2Dec 28, 2021

Vacuum-integrated hardmask processes and apparatus

LAM RES CORP21 citations94
US10514598B2Dec 24, 2019

Vacuum-integrated hardmask processes and apparatus

LAM RES CORP33 citations94
US10374144B2Aug 6, 2019

Dry plasma etch method to pattern MRAM stack

LAM RES CORP21 citations94
US10186426B2Jan 22, 2019

Integrating atomic scale processes: ALD (atomic layer deposition) and ale (atomic layer etch)

LAM RES CORP16 citations94
US10096487B2Oct 9, 2018

Atomic layer etching of tungsten and other metals

LAM RES CORP24 citations94
US9153486B2Oct 6, 2015

CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications

LAM RES CORP31 citations94
US6362110B1Mar 26, 2002

Enhanced resist strip in a dielectric etcher using downstream plasma

LAM RES CORP46 citations93
US10056264B2Aug 21, 2018

Atomic layer etching of GaN and other III-V materials

LAM RES CORP20 citations92
US6908846B2Jun 21, 2005

Method and apparatus for detecting endpoint during plasma etching of thin films

LAM RES CORP24 citations92
US7405521B2Jul 29, 2008

Multiple frequency plasma processor method and apparatus

LAM RES CORP35 citations91
US10749103B2Aug 18, 2020

Dry plasma etch method to pattern MRAM stack

LAM RES CORP7 citations84

Showing the top 50 of 75 patents by PatentIndex Score.