Inventor
KESWICK PETER R
US11 patents
Patents
11 patentsUS5888414AMar 30, 1999
Plasma reactor and processes using RF inductive coupling and scavenger temperature control
APPLIED MATERIALS INC203 citations99
US5423945AJun 13, 1995
Selectivity for etching an oxide over a nitride
APPLIED MATERIALS INC220 citations99
US6518195B1Feb 11, 2003
Plasma reactor using inductive RF coupling, and processes
APPLIED MATERIALS INC162 citations98
US6444137B1Sep 3, 2002
Method for processing substrates using gaseous silicon scavenger
APPLIED MATERIALS INC127 citations98
US6068784AMay 30, 2000
Process used in an RF coupled plasma reactor
APPLIED MATERIALS INC173 citations98
US5556501ASep 17, 1996
Silicon scavenger in an inductively coupled RF plasma reactor
APPLIED MATERIALS INC396 citations98
US6545420B1Apr 8, 2003
Plasma reactor using inductive RF coupling, and processes
APPLIED MATERIALS INC135 citations97
US6488807B1Dec 3, 2002
Magnetic confinement in a plasma reactor having an RF bias electrode
APPLIED MATERIALS INC145 citations97
US6251792B1Jun 26, 2001
Plasma etch processes
APPLIED MATERIALS INC122 citations97
US6399514B1Jun 4, 2002
High temperature silicon surface providing high selectivity in an oxide etch process
APPLIED MATERIALS INC30 citations92
US6171974B1Jan 9, 2001
High selectivity oxide etch process for integrated circuit structures
APPLIED MATERIALS INC23 citations92