Inventor
KAWASHIMA HIROMI
JP23 patents
Patents
23 patentsUS5452251ASep 19, 1995
Semiconductor memory device for selecting and deselecting blocks of word lines
FUJITSU LTD70 citations97
US5608670AMar 4, 1997
Flash memory with improved erasability and its circuitry
FUJITSU LTD66 citations96
US5576637ANov 19, 1996
XOR CMOS logic gate
FUJITSU LTD40 citations96
US4937830AJun 26, 1990
Semiconductor memory device having function of checking and correcting error of read-out data
FUJITSU LTD70 citations96
US5770963AJun 23, 1998
Flash memory with improved erasability and its circuitry
FUJITSU LTD19 citations92
US5666314ASep 9, 1997
Semiconductor memory device for selecting and deselecting blocks of word lines
FUJITSU LTD18 citations92
US5592419AJan 7, 1997
Flash memory with improved erasability and its circuitry
FUJITSU LTD23 citations92
US4812680AMar 14, 1989
High voltage detecting circuit
FUJITSU LTD27 citations92
US4601020AJul 15, 1986
Semiconductor memory device
FUJITSU LTD37 citations92
US5173876ADec 22, 1992
Electrically erasable and programmable non-volatile semiconductor memory device
FUJITSU LTD23 citations91
US5631597AMay 20, 1997
Negative voltage circuit for a flash memory
FUJITSU LTD10 citations82
US4584494AApr 22, 1986
Semiconductor timer
FUJITSU LTD21 citations82
US6288945B1Sep 11, 2001
Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
FUJITSU LTD7 citations74
US5815440ASep 29, 1998
Semiconductor memory device with electrically controllable threshold voltage
FUJITSU LTD7 citations74
US5428580AJun 27, 1995
Nonvolatile semiconductor memory having an address-transition-detection circuit
FUJITSU LTD17 citations74
US5111136AMay 5, 1992
Semiconductor circuit
FUJITSU LTD15 citations74
US4817055AMar 28, 1989
Semiconductor memory circuit including bias voltage generator
FUJITSU LTD16 citations74
US4773046ASep 20, 1988
Semiconductor device having fuse circuit and detecting circuit for detecting states of fuses in the fuse circuit
FUJITSU LTD17 citations74
US4744058AMay 10, 1988
Semiconductor programmable memory device and method of writing a predetermined pattern to same
FUJITSU LTD9 citations74
US4644182AFeb 17, 1987
Delay circuit having delay time period determined by discharging operation
FUJITSU LTD14 citations74
US5249156ASep 28, 1993
Semiconductor memory device having non-volatile and volatile memory cells
FUJITSU LTD7 citations73
US6611464B2Aug 26, 2003
Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
FUJITSU LTD0 citations52
US6563738B2May 13, 2003
Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
FUJITSU LTD0 citations52