Inventor
YAMASHITA MINORU
JP31 patents
⚠️ This page may combine multiple inventors who share the name “YAMASHITA MINORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
17 patentsUS6639849B2Oct 28, 2003
Nonvolatile semiconductor memory device programming second dynamic reference cell according to threshold value of first dynamic reference cell
FUJITSU LTD369 citations99
US5452251ASep 19, 1995
Semiconductor memory device for selecting and deselecting blocks of word lines
FUJITSU LTD70 citations97
US5982670ANov 9, 1999
Non-volatile memory device
FUJITSU LTD43 citations92
US5910916AJun 8, 1999
Flash-erasable semiconductor memory device having improved reliability
FUJITSU LTD21 citations92
US5666314ASep 9, 1997
Semiconductor memory device for selecting and deselecting blocks of word lines
FUJITSU LTD18 citations92
US6014329AJan 11, 2000
Flash-erasable semiconductor memory device having an improved reliability
FUJITSU LTD14 citations82
US5761127AJun 2, 1998
Flash-erasable semiconductor memory device having an improved reliability
FUJITSU LTD14 citations82
US6934194B2Aug 23, 2005
Nonvolatile memory having a trap layer
FUJITSU LTD11 citations74
US6115293ASep 5, 2000
Non-volatile semiconductor memory device
FUJITSU LTD8 citations74
US5835408ANov 10, 1998
Flash-erasable semiconductor memory device having an improved reliability
FUJITSU LTD8 citations74
US5815440ASep 29, 1998
Semiconductor memory device with electrically controllable threshold voltage
FUJITSU LTD7 citations74
US6765828B2Jul 20, 2004
Non-volatile semiconductor storage device and method of reading out data
FUJITSU LTD3 citations63
US5870337AFeb 9, 1999
Flash-erasable semiconductor memory device having an improved reliability
FUJITSU LTD2 citations63
US5835416ANov 10, 1998
Flash-erasable semiconductor memory device having an improved reliability
FUJITSU LTD1 citations63
US6914824B2Jul 5, 2005
Non-volatile semiconductor memory that is based on a virtual ground method
FUJITSU LTD2 citations60
US6611464B2Aug 26, 2003
Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
FUJITSU LTD0 citations52
US6563738B2May 13, 2003
Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
FUJITSU LTD0 citations52
SPANSION LLC
5 patentsUS7221587B2May 22, 2007
Semiconductor device and programming method
SPANSION LLC20 citations92
US7206241B2Apr 17, 2007
Semiconductor device and programming method
SPANSION LLC13 citations83
US7835183B2Nov 16, 2010
Nonvolatile storage device and control method thereof
SPANSION LLC5 citations63
US7307894B2Dec 11, 2007
Semiconductor device and control method of the same
SPANSION LLC6 citations62
US7224602B2May 29, 2007
Semiconductor memory device and control method having data protection feature
SPANSION LLC3 citations62
SANDISK TECHNOLOGIES LLC
3 patentsUS12014795B2Jun 18, 2024
Double sense amp and fractional bit assignment in non-volatile memory structures
SANDISK TECHNOLOGIES LLC0 citations49
US11776640B2Oct 3, 2023
Data conversion with data path circuits for use in double sense amp architecture with fractional bit assignment in non-volatile memory structures
SANDISK TECHNOLOGIES LLC0 citations49
US10726189B2Jul 28, 2020
Less-pessimistic static timing analysis for synchronous circuits
SANDISK TECHNOLOGIES LLC0 citations42