Inventor
MIYAWAKI YOSHIKAZU
JP37 patents
⚠️ This page may combine multiple inventors who share the name “MIYAWAKI YOSHIKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
34 patentsUS5745417AApr 28, 1998
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP135 citations99
US5428568AJun 27, 1995
Electrically erasable and programmable non-volatile memory device and a method of operating the same
MITSUBISHI ELECTRIC CORP120 citations98
US5297096AMar 22, 1994
Nonvolatile semiconductor memory device and data erasing method thereof
MITSUBISHI ELECTRIC CORP135 citations98
US6330192B1Dec 11, 2001
Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device
MITSUBISHI ELECTRIC CORP74 citations96
US5898606AApr 27, 1999
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP63 citations96
US5371705ADec 6, 1994
Internal voltage generator for a non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP76 citations96
US5363330ANov 8, 1994
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP94 citations96
US5347490ASep 13, 1994
Nonvolatile semiconductor memory device
MITSUBISHI ELECTRIC CORP77 citations96
US5283758AFeb 1, 1994
Non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP67 citations96
US5233610AAug 3, 1993
Semiconductor memory device having error correcting function
MITSUBISHI ELECTRIC CORP109 citations96
US5132928AJul 21, 1992
Divided word line type non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP78 citations96
US4970727ANov 13, 1990
Semiconductor integrated circuit having multiple self-test functions and operating method therefor
MITSUBISHI ELECTRIC CORP95 citations96
US5659505AAug 19, 1997
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP67 citations95
US6567316B1May 20, 2003
Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device
MITSUBISHI ELECTRIC CORP27 citations93
US6388921B1May 14, 2002
Nonvolatile semiconductor memory device with improved reliability and operation speed
MITSUBISHI ELECTRIC CORP20 citations93
US6385086B1May 7, 2002
Nonvolatile semiconductor memory device capable of high speed generation of rewrite voltage
MITSUBISHI ELECTRIC CORP54 citations93
US6243292B1Jun 5, 2001
Nonvolatile semiconductor memory device capable of reducing memory array area
MITSUBISHI ELECTRIC CORP39 citations93
US6008674ADec 28, 1999
Semiconductor integrated circuit device with adjustable high voltage detection circuit
MITSUBISHI ELECTRIC CORP46 citations93
US5959890ASep 28, 1999
Non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP33 citations93
US5940283AAug 17, 1999
High voltage generating device having variable boosting capability according to magnitude of load
MITSUBISHI ELECTRIC CORP38 citations93
US5615149AMar 25, 1997
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP28 citations93
US5544117AAug 6, 1996
Non-volatile semiconductor memory device with improved collective erasing operation
MITSUBISHI ELECTRIC CORP40 citations93
US5402382AMar 28, 1995
Nonvolatile semiconductor memory device capable of erasing by a word line unit
MITSUBISHI ELECTRIC CORP32 citations93
US6515908B2Feb 4, 2003
Nonvolatile semiconductor memory device having reduced erase time and method of erasing data of the same
MITSUBISHI ELECTRIC CORP37 citations92
US6515900B2Feb 4, 2003
Non-volatile memory with background operation function
MITSUBISHI ELECTRIC CORP31 citations92
US5602778AFeb 11, 1997
Nonvolatile semiconductor memory device with a row redundancy circuit
MITSUBISHI ELECTRIC CORP39 citations92
US5548557AAug 20, 1996
Nonvolatile semiconductor memory device with a row redundancy circuit
MITSUBISHI ELECTRIC CORP42 citations92
US6483748B2Nov 19, 2002
Nonvolatile memory with background operation function
MITSUBISHI ELECTRIC CORP17 citations84
US6473345B2Oct 29, 2002
Semiconductor memory device which can be simultaneously tested even when the number of semiconductor memory devices is large and semiconductor wafer on which the semiconductor memory devices are formed
MITSUBISHI ELECTRIC CORP7 citations74
US6466508B1Oct 15, 2002
Semiconductor memory device having high-speed read function
MITSUBISHI ELECTRIC CORP12 citations74
US5554868ASep 10, 1996
Non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP10 citations74
US5521863AMay 28, 1996
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP6 citations74
US5563824AOct 8, 1996
Nonvolatile semiconductor memory device and method of erasing stored data thereof
MITSUBISHI ELECTRIC CORP14 citations73
US5485421AJan 16, 1996
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP0 citations52