P

Inventor

MIYAWAKI YOSHIKAZU

JP37 patents
⚠️ This page may combine multiple inventors who share the name “MIYAWAKI YOSHIKAZU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

34 patents
US5745417AApr 28, 1998

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP135 citations99
US5428568AJun 27, 1995

Electrically erasable and programmable non-volatile memory device and a method of operating the same

MITSUBISHI ELECTRIC CORP120 citations98
US5297096AMar 22, 1994

Nonvolatile semiconductor memory device and data erasing method thereof

MITSUBISHI ELECTRIC CORP135 citations98
US6330192B1Dec 11, 2001

Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device

MITSUBISHI ELECTRIC CORP74 citations96
US5898606AApr 27, 1999

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP63 citations96
US5371705ADec 6, 1994

Internal voltage generator for a non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP76 citations96
US5363330ANov 8, 1994

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP94 citations96
US5347490ASep 13, 1994

Nonvolatile semiconductor memory device

MITSUBISHI ELECTRIC CORP77 citations96
US5283758AFeb 1, 1994

Non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP67 citations96
US5233610AAug 3, 1993

Semiconductor memory device having error correcting function

MITSUBISHI ELECTRIC CORP109 citations96
US5132928AJul 21, 1992

Divided word line type non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP78 citations96
US4970727ANov 13, 1990

Semiconductor integrated circuit having multiple self-test functions and operating method therefor

MITSUBISHI ELECTRIC CORP95 citations96
US5659505AAug 19, 1997

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP67 citations95
US6567316B1May 20, 2003

Nonvolatile semiconductor memory device and method of erasing data of nonvolatile semiconductor memory device

MITSUBISHI ELECTRIC CORP27 citations93
US6388921B1May 14, 2002

Nonvolatile semiconductor memory device with improved reliability and operation speed

MITSUBISHI ELECTRIC CORP20 citations93
US6385086B1May 7, 2002

Nonvolatile semiconductor memory device capable of high speed generation of rewrite voltage

MITSUBISHI ELECTRIC CORP54 citations93
US6243292B1Jun 5, 2001

Nonvolatile semiconductor memory device capable of reducing memory array area

MITSUBISHI ELECTRIC CORP39 citations93
US6008674ADec 28, 1999

Semiconductor integrated circuit device with adjustable high voltage detection circuit

MITSUBISHI ELECTRIC CORP46 citations93
US5959890ASep 28, 1999

Non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP33 citations93
US5940283AAug 17, 1999

High voltage generating device having variable boosting capability according to magnitude of load

MITSUBISHI ELECTRIC CORP38 citations93
US5615149AMar 25, 1997

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP28 citations93
US5544117AAug 6, 1996

Non-volatile semiconductor memory device with improved collective erasing operation

MITSUBISHI ELECTRIC CORP40 citations93
US5402382AMar 28, 1995

Nonvolatile semiconductor memory device capable of erasing by a word line unit

MITSUBISHI ELECTRIC CORP32 citations93
US6515908B2Feb 4, 2003

Nonvolatile semiconductor memory device having reduced erase time and method of erasing data of the same

MITSUBISHI ELECTRIC CORP37 citations92
US6515900B2Feb 4, 2003

Non-volatile memory with background operation function

MITSUBISHI ELECTRIC CORP31 citations92
US5602778AFeb 11, 1997

Nonvolatile semiconductor memory device with a row redundancy circuit

MITSUBISHI ELECTRIC CORP39 citations92
US5548557AAug 20, 1996

Nonvolatile semiconductor memory device with a row redundancy circuit

MITSUBISHI ELECTRIC CORP42 citations92
US6483748B2Nov 19, 2002

Nonvolatile memory with background operation function

MITSUBISHI ELECTRIC CORP17 citations84
US6473345B2Oct 29, 2002

Semiconductor memory device which can be simultaneously tested even when the number of semiconductor memory devices is large and semiconductor wafer on which the semiconductor memory devices are formed

MITSUBISHI ELECTRIC CORP7 citations74
US6466508B1Oct 15, 2002

Semiconductor memory device having high-speed read function

MITSUBISHI ELECTRIC CORP12 citations74
US5554868ASep 10, 1996

Non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP10 citations74
US5521863AMay 28, 1996

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP6 citations74
US5563824AOct 8, 1996

Nonvolatile semiconductor memory device and method of erasing stored data thereof

MITSUBISHI ELECTRIC CORP14 citations73
US5485421AJan 16, 1996

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP0 citations52

RENESAS TECH CORP

1 patent

RENESAS SOLUTIONS CORP

1 patent

WANG ZIH-SONG

1 patent