P

Inventor

FUTATSUYA TOMOSHI

JP24 patents
⚠️ This page may combine multiple inventors who share the name “FUTATSUYA TOMOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MITSUBISHI ELECTRIC CORP

21 patents
US5745417AApr 28, 1998

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP135 citations99
US5428568AJun 27, 1995

Electrically erasable and programmable non-volatile memory device and a method of operating the same

MITSUBISHI ELECTRIC CORP120 citations98
US5297096AMar 22, 1994

Nonvolatile semiconductor memory device and data erasing method thereof

MITSUBISHI ELECTRIC CORP135 citations98
US6069518AMay 30, 2000

Semiconductor device allowing generation of desired internal voltage at high accuracy

MITSUBISHI ELECTRIC CORP62 citations96
US5898606AApr 27, 1999

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP63 citations96
US5371705ADec 6, 1994

Internal voltage generator for a non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP76 citations96
US5363330ANov 8, 1994

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP94 citations96
US5659505AAug 19, 1997

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP67 citations95
US6388921B1May 14, 2002

Nonvolatile semiconductor memory device with improved reliability and operation speed

MITSUBISHI ELECTRIC CORP20 citations93
US6243292B1Jun 5, 2001

Nonvolatile semiconductor memory device capable of reducing memory array area

MITSUBISHI ELECTRIC CORP39 citations93
US5999475ADec 7, 1999

Internal potential generation circuit that can output a plurality of potentials, suppressing increase in circuit area

MITSUBISHI ELECTRIC CORP52 citations93
US5615149AMar 25, 1997

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP28 citations93
US5402382AMar 28, 1995

Nonvolatile semiconductor memory device capable of erasing by a word line unit

MITSUBISHI ELECTRIC CORP32 citations93
US6515900B2Feb 4, 2003

Non-volatile memory with background operation function

MITSUBISHI ELECTRIC CORP31 citations92
US5602778AFeb 11, 1997

Nonvolatile semiconductor memory device with a row redundancy circuit

MITSUBISHI ELECTRIC CORP39 citations92
US5548557AAug 20, 1996

Nonvolatile semiconductor memory device with a row redundancy circuit

MITSUBISHI ELECTRIC CORP42 citations92
US5521864AMay 28, 1996

Non-volatile semiconductor memory device allowing fast verifying operation

MITSUBISHI ELECTRIC CORP50 citations92
US5847994ADec 8, 1998

Non-volatile semiconductor memory device having a back ground operation mode

MITSUBISHI ELECTRIC CORP62 citations91
US6483748B2Nov 19, 2002

Nonvolatile memory with background operation function

MITSUBISHI ELECTRIC CORP17 citations84
US5521863AMay 28, 1996

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP6 citations74
US5485421AJan 16, 1996

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP0 citations52

RENESAS TECH CORP

2 patents

TANIZAKI HIROAKI

1 patent