Inventor
FUTATSUYA TOMOSHI
JP24 patents
⚠️ This page may combine multiple inventors who share the name “FUTATSUYA TOMOSHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MITSUBISHI ELECTRIC CORP
21 patentsUS5745417AApr 28, 1998
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP135 citations99
US5428568AJun 27, 1995
Electrically erasable and programmable non-volatile memory device and a method of operating the same
MITSUBISHI ELECTRIC CORP120 citations98
US5297096AMar 22, 1994
Nonvolatile semiconductor memory device and data erasing method thereof
MITSUBISHI ELECTRIC CORP135 citations98
US6069518AMay 30, 2000
Semiconductor device allowing generation of desired internal voltage at high accuracy
MITSUBISHI ELECTRIC CORP62 citations96
US5898606AApr 27, 1999
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP63 citations96
US5371705ADec 6, 1994
Internal voltage generator for a non-volatile semiconductor memory device
MITSUBISHI ELECTRIC CORP76 citations96
US5363330ANov 8, 1994
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP94 citations96
US5659505AAug 19, 1997
Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor
MITSUBISHI ELECTRIC CORP67 citations95
US6388921B1May 14, 2002
Nonvolatile semiconductor memory device with improved reliability and operation speed
MITSUBISHI ELECTRIC CORP20 citations93
US6243292B1Jun 5, 2001
Nonvolatile semiconductor memory device capable of reducing memory array area
MITSUBISHI ELECTRIC CORP39 citations93
US5999475ADec 7, 1999
Internal potential generation circuit that can output a plurality of potentials, suppressing increase in circuit area
MITSUBISHI ELECTRIC CORP52 citations93
US5615149AMar 25, 1997
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP28 citations93
US5402382AMar 28, 1995
Nonvolatile semiconductor memory device capable of erasing by a word line unit
MITSUBISHI ELECTRIC CORP32 citations93
US6515900B2Feb 4, 2003
Non-volatile memory with background operation function
MITSUBISHI ELECTRIC CORP31 citations92
US5602778AFeb 11, 1997
Nonvolatile semiconductor memory device with a row redundancy circuit
MITSUBISHI ELECTRIC CORP39 citations92
US5548557AAug 20, 1996
Nonvolatile semiconductor memory device with a row redundancy circuit
MITSUBISHI ELECTRIC CORP42 citations92
US5521864AMay 28, 1996
Non-volatile semiconductor memory device allowing fast verifying operation
MITSUBISHI ELECTRIC CORP50 citations92
US5847994ADec 8, 1998
Non-volatile semiconductor memory device having a back ground operation mode
MITSUBISHI ELECTRIC CORP62 citations91
US6483748B2Nov 19, 2002
Nonvolatile memory with background operation function
MITSUBISHI ELECTRIC CORP17 citations84
US5521863AMay 28, 1996
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP6 citations74
US5485421AJan 16, 1996
Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming
MITSUBISHI ELECTRIC CORP0 citations52