Inventor

TERADA YASUSHI

JP37 patents

Patents

37 patents

US5745417AApr 28, 1998

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP135 citations99

US4811294AMar 7, 1989

Data integrity verifying circuit for electrically erasable and programmable read only memory (EEPROM)

MITSUBISHI ELECTRIC CORP203 citations99

US5428568AJun 27, 1995

Electrically erasable and programmable non-volatile memory device and a method of operating the same

MITSUBISHI ELECTRIC CORP120 citations98

US5297096AMar 22, 1994

Nonvolatile semiconductor memory device and data erasing method thereof

MITSUBISHI ELECTRIC CORP135 citations98

US5898606AApr 27, 1999

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP63 citations96

US5371705ADec 6, 1994

Internal voltage generator for a non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP76 citations96

US5363330ANov 8, 1994

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP94 citations96

US5347490ASep 13, 1994

Semiconductor integrated circuit having multiple self-test functions and operating method therefor

MITSUBISHI ELECTRIC CORP95 citations96

US4958317ASep 18, 1990

Nonvolatile semiconductor memory device and a writing method using electron tunneling

MITSUBISHI ELECTRIC CORP60 citations96

US4953129AAug 28, 1990

Nonvolatile semiconductor memory device capable of reliably writing data and a data writing method therefor

MITSUBISHI ELECTRIC CORP90 citations96

US4903236AFeb 20, 1990

Nonvolatile semiconductor memory device and a writing method therefor

MITSUBISHI ELECTRIC CORP81 citations96

US5659505AAug 19, 1997

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

MITSUBISHI ELECTRIC CORP67 citations95

US5615149AMar 25, 1997

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP28 citations93

US5544117AAug 6, 1996

Non-volatile semiconductor memory device with improved collective erasing operation

MITSUBISHI ELECTRIC CORP40 citations93

US5402382AMar 28, 1995

Nonvolatile semiconductor memory device capable of erasing by a word line unit

MITSUBISHI ELECTRIC CORP32 citations93

US5022009AJun 4, 1991

Semiconductor memory device having reading operation of information by differential amplification

MITSUBISHI ELECTRIC CORP31 citations93

US4933906AJun 12, 1990

Non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP45 citations93

US4858194AAug 15, 1989

Nonvolatile semiconductor memory device using source of a single supply voltage

MITSUBISHI ELECTRIC CORP44 citations93

US4813018AMar 14, 1989

Nonvolatile semiconductor memory device

MITSUBISHI ELECTRIC CORP42 citations93

US4805151AFeb 14, 1989

Nonvolatile semiconductor memory device

MITSUBISHI ELECTRIC CORP48 citations93

US4733371AMar 22, 1988

Semiconductor memory device with high voltage switch

MITSUBISHI ELECTRIC CORP51 citations93

US4725983AFeb 16, 1988

Nonvolatile semiconductor memory device

MITSUBISHI ELECTRIC CORP27 citations93

US4694314ASep 15, 1987

Semiconductor device

MITSUBISHI ELECTRIC CORP29 citations93

US5602778AFeb 11, 1997

Nonvolatile semiconductor memory device with a row redundancy circuit

MITSUBISHI ELECTRIC CORP39 citations92

US5548557AAug 20, 1996

Nonvolatile semiconductor memory device with a row redundancy circuit

MITSUBISHI ELECTRIC CORP42 citations92

US5105384AApr 14, 1992

Low current semiconductor memory device

MITSUBISHI ELECTRIC CORP21 citations82

US5554868ASep 10, 1996

Non-volatile semiconductor memory device

MITSUBISHI ELECTRIC CORP10 citations74

US5521863AMay 28, 1996

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP6 citations74

US5253210AOct 12, 1993

Paritioned bit line structure of EEPROM and method of reading data therefrom

MITSUBISHI ELECTRIC CORP19 citations74

US4760556AJul 26, 1988

Nonvolatile semiconductor memory device

MITSUBISHI ELECTRIC CORP18 citations74

US4691216ASep 1, 1987

Semiconductor memory device

MITSUBISHI ELECTRIC CORP5 citations63

US5485421AJan 16, 1996

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

MITSUBISHI ELECTRIC CORP0 citations52

TERADA YASUSHI

Patents

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

Data integrity verifying circuit for electrically erasable and programmable read only memory (EEPROM)

Electrically erasable and programmable non-volatile memory device and a method of operating the same

Nonvolatile semiconductor memory device and data erasing method thereof

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

Internal voltage generator for a non-volatile semiconductor memory device

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

Nonvolatile semiconductor memory device

Non-volatile semiconductor memory device

Semiconductor memory device having error correcting function

Divided word line type non-volatile semiconductor memory device

Nonvolatile content-addressable memory and operating method therefor

Semiconductor integrated circuit having multiple self-test functions and operating method therefor

Nonvolatile semiconductor memory device and a writing method using electron tunneling

Nonvolatile semiconductor memory device capable of reliably writing data and a data writing method therefor

Nonvolatile semiconductor memory device and a writing method therefor

Electrically programmable and erasable nonvolatile semiconductor memory device and operating method therefor

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

Non-volatile semiconductor memory device with improved collective erasing operation

Nonvolatile semiconductor memory device capable of erasing by a word line unit

Semiconductor memory device having reading operation of information by differential amplification

Non-volatile semiconductor memory device

Nonvolatile semiconductor memory device using source of a single supply voltage

Nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device

Semiconductor memory device with high voltage switch

Nonvolatile semiconductor memory device

Semiconductor device

Nonvolatile semiconductor memory device with a row redundancy circuit

Nonvolatile semiconductor memory device with a row redundancy circuit

Low current semiconductor memory device

Non-volatile semiconductor memory device

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming

Paritioned bit line structure of EEPROM and method of reading data therefrom

Nonvolatile semiconductor memory device

Semiconductor memory device

Non-volatile semiconductor memory device incorporating data latch and address counter for page mode programming