Inventor
NALLAN PADMAPANI
US15 patents
Patents
15 patentsUS6531404B1Mar 11, 2003
Method of etching titanium nitride
APPLIED MATERIALS INC61 citations96
US6583065B1Jun 24, 2003
Sidewall polymer forming gas additives for etching processes
APPLIED MATERIALS INC105 citations94
US6660127B2Dec 9, 2003
Apparatus for plasma etching at a constant etch rate
APPLIED MATERIALS INC26 citations92
US6399507B1Jun 4, 2002
Stable plasma process for etching of films
APPLIED MATERIALS INC34 citations92
US6368978B1Apr 9, 2002
Hydrogen-free method of plasma etching indium tin oxide
APPLIED MATERIALS INC26 citations92
US6322714B1Nov 27, 2001
Process for etching silicon-containing material on substrates
APPLIED MATERIALS INC50 citations92
US6132631AOct 17, 2000
Anisotropic silicon nitride etching for shallow trench isolation in an high density plasma system
APPLIED MATERIALS INC35 citations92
US6579806B2Jun 17, 2003
Method of etching tungsten or tungsten nitride in semiconductor structures
APPLIED MATERIALS INC16 citations91
US6440870B1Aug 27, 2002
Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
APPLIED MATERIALS INC28 citations91
US6423644B1Jul 23, 2002
Method of etching tungsten or tungsten nitride electrode gates in semiconductor structures
APPLIED MATERIALS INC25 citations91
US7094704B2Aug 22, 2006
Method of plasma etching of high-K dielectric materials
APPLIED MATERIALS INC11 citations84
US6503845B1Jan 7, 2003
Method of etching a tantalum nitride layer in a high density plasma
APPLIED MATERIALS INC14 citations83
US6069086AMay 30, 2000
Non-HBr shallow trench isolation etch process
APPLIED MATERIALS INC9 citations68
US6642151B2Nov 4, 2003
Techniques for plasma etching silicon-germanium
APPLIED MATERIALS INC5 citations63
US7838434B2Nov 23, 2010
Method of plasma etching of high-K dielectric materials
APPLIED MATERIALS INC1 citations52