Inventor

HINTERMAIER FRANK

DE19 patents

⚠️ This page may combine multiple inventors who share the name “HINTERMAIER FRANK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HINTERMAIER FRANK

INFINEON TECHNOLOGIES AG

Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltages

Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize

Process for producing a ceramic layer

Method for producing barrier-free semiconductor memory configurations

Method for producing a ferroelectric layer

Method of patterning ferroelectric layers

Easy to manufacture integrated semiconductor memory configuration with platinum electrodes

Process for etching bismuth-containing oxide films

Method for fabricating a patterned layer

Complex of an element of transition group IV or V for forming an improved precursor combination

Capacitor having a barrier layer made of a transition metal phosphide, arsenide or sulfide

SIEMENS AG

Method of producing a barrier layer in a semiconductor body

Device for the deposition of substances

Process for producing thin films of oxide ceramic

Process for producing an integrated semiconductor memory configuration

Process for producing barrier-free semiconductor memory configurations

Process for producing a ceramic layer containing Bi

ADVANCED TECH MATERIALS

Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition

Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films