Inventor
KUDELKA STEPHAN
US45 patents
⚠️ This page may combine multiple inventors who share the name “KUDELKA STEPHAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
29 patentsUS6599798B2Jul 29, 2003
Method of preparing buried LOCOS collar in trench DRAMS
INFINEON TECHNOLOGIES AG26 citations93
US6566273B2May 20, 2003
Etch selectivity inversion for etching along crystallographic directions in silicon
INFINEON TECHNOLOGIES AG35 citations93
US6406970B1Jun 18, 2002
Buried strap formation without TTO deposition
INFINEON TECHNOLOGIES AG28 citations93
US6740555B1May 25, 2004
Semiconductor structures and manufacturing methods
INFINEON TECHNOLOGIES AG16 citations92
US6458647B1Oct 1, 2002
Process flow for sacrificial collar with poly mask
INFINEON TECHNOLOGIES AG22 citations92
US6437401B1Aug 20, 2002
Structure and method for improved isolation in trench storage cells
INFINEON TECHNOLOGIES AG38 citations92
US6426253B1Jul 30, 2002
Method of forming a vertically oriented device in an integrated circuit
INFINEON TECHNOLOGIES AG49 citations92
US6335247B1Jan 1, 2002
Integrated circuit vertical trench device and method of forming thereof
INFINEON TECHNOLOGIES AG25 citations92
US6261972B1Jul 17, 2001
Dual gate oxide process for uniform oxide thickness
INFINEON TECHNOLOGIES AG27 citations89
US6919255B2Jul 19, 2005
Semiconductor trench structure
INFINEON TECHNOLOGIES AG16 citations84
US6670235B1Dec 30, 2003
Process flow for two-step collar in DRAM preparation
INFINEON TECHNOLOGIES AG16 citations84
US6486024B1Nov 26, 2002
Integrated circuit trench device with a dielectric collar stack, and method of forming thereof
INFINEON TECHNOLOGIES AG14 citations84
US6953722B2Oct 11, 2005
Method for patterning ceramic layers
INFINEON TECHNOLOGIES AG16 citations83
US6740595B2May 25, 2004
Etch process for recessing polysilicon in trench structures
INFINEON TECHNOLOGIES AG16 citations83
US7157371B2Jan 2, 2007
Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devices
INFINEON TECHNOLOGIES AG9 citations74
US6853025B2Feb 8, 2005
Trench capacitor with buried strap
INFINEON TECHNOLOGIES AG9 citations74
US6677197B2Jan 13, 2004
High aspect ratio PBL SiN barrier formation
INFINEON TECHNOLOGIES AG12 citations74
US6605860B1Aug 12, 2003
Semiconductor structures and manufacturing methods
INFINEON TECHNOLOGIES AG10 citations73
US6352893B1Mar 5, 2002
Low temperature self-aligned collar formation
INFINEON TECHNOLOGIES AG13 citations73
US6916721B2Jul 12, 2005
Method for fabricating a trench capacitor with an insulation collar
INFINEON TECHNOLOGIES AG11 citations72
US6548344B1Apr 15, 2003
Spacer formation process using oxide shield
INFINEON TECHNOLOGIES AG10 citations72
US6927172B2Aug 9, 2005
Process to suppress lithography at a wafer edge
INFINEON TECHNOLOGIES AG10 citations71
US7273790B2Sep 25, 2007
Method for fabricating trench capacitor with insulation collar electrically connected to substrate through buried contact, in particular, for a semiconductor memory cell
INFINEON TECHNOLOGIES AG2 citations63
US7157382B2Jan 2, 2007
Method for expanding a trench in a semiconductor structure
INFINEON TECHNOLOGIES AG2 citations63
US7312114B2Dec 25, 2007
Manufacturing method for a trench capacitor having an isolation collar electrically connected with a substrate on a single side via a buried contact for use in a semiconductor memory cell
INFINEON TECHNOLOGIES AG2 citations55
US6309983B1Oct 30, 2001
Low temperature sacrificial oxide formation
INFINEON TECHNOLOGIES AG4 citations54
US7157329B2Jan 2, 2007
Trench capacitor with buried strap
INFINEON TECHNOLOGIES AG1 citations52
US7402860B2Jul 22, 2008
Method for fabricating a capacitor
INFINEON TECHNOLOGIES AG0 citations49
US7189614B2Mar 13, 2007
Method for fabricating a trench structure which is electrically connected to a substrate on one side via a buried contact
INFINEON TECHNOLOGIES AG0 citations34
IBM
7 patentsUS6440872B1Aug 27, 2002
Method for hybrid DRAM cell utilizing confined strap isolation
IBM166 citations99
US6498061B2Dec 24, 2002
Negative ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formation
IBM66 citations96
US6555430B1Apr 29, 2003
Process flow for capacitance enhancement in a DRAM trench
IBM44 citations92
US6605838B1Aug 12, 2003
Process flow for thick isolation collar with reduced length
IBM39 citations90
US6613642B2Sep 2, 2003
Method for surface roughness enhancement in semiconductor capacitor manufacturing
IBM8 citations73
US7157328B2Jan 2, 2007
Selective etching to increase trench surface area
IBM4 citations59
US6974743B2Dec 13, 2005
Method of making encapsulated spacers in vertical pass gate DRAM and damascene logic gates
IBM6 citations57
INFINEON TECHNOLOGIES CORP
5 patentsUS6573137B1Jun 3, 2003
Single sided buried strap
INFINEON TECHNOLOGIES CORP58 citations96
US6295998B1Oct 2, 2001
Temperature controlled gassification of deionized water for megasonic cleaning of semiconductor wafers
INFINEON TECHNOLOGIES CORP25 citations92
US6167891B1Jan 2, 2001
Temperature controlled degassification of deionized water for megasonic cleaning of semiconductor wafers
INFINEON TECHNOLOGIES CORP35 citations92
US6066527AMay 23, 2000
Buried strap poly etch back (BSPE) process
INFINEON TECHNOLOGIES CORP45 citations92
US6559002B1May 6, 2003
Rough oxide hard mask for DT surface area enhancement for DT DRAM
INFINEON TECHNOLOGIES CORP3 citations62
QIMONDA AG
3 patentsUS7666752B2Feb 23, 2010
Deposition method for a transition-metal-containing dielectric
QIMONDA AG17 citations82
US7531418B2May 12, 2009
Method of producing a conductive layer including two metal nitrides
QIMONDA AG0 citations48
US7413951B2Aug 19, 2008
Stacked capacitor and method for producing stacked capacitors for dynamic memory cells
QIMONDA AG0 citations41