Inventor
EARL REN
US9 patents
Patents
9 patentsUS6358756B1Mar 19, 2002
Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme
MICRON TECHNOLOGY INC163 citations98
US6653154B2Nov 25, 2003
Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
MICRON TECHNOLOGY INC45 citations96
US6521931B2Feb 18, 2003
Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment scheme
MICRON TECHNOLOGY INC47 citations96
US6750069B2Jun 15, 2004
Minimally spaced MRAM structures
MICRON TECHNOLOGY INC18 citations92
US6682943B2Jan 27, 2004
Method for forming minimally spaced MRAM structures
MICRON TECHNOLOGY INC13 citations84
US6765250B2Jul 20, 2004
Self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
MICRON TECHNOLOGY INC9 citations73
US6689624B2Feb 10, 2004
Method of forming self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure
MICRON TECHNOLOGY INC12 citations73
US6689661B2Feb 10, 2004
Method for forming minimally spaced MRAM structures
MICRON TECHNOLOGY INC11 citations73
US6885051B2Apr 26, 2005
Minimally spaced MRAM structures
MICRON TECHNOLOGY INC0 citations52