P

Inventor

DEVIN JEAN

FR40 patents
⚠️ This page may combine multiple inventors who share the name “DEVIN JEAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SGS THOMSON MICROELECTRONICS

21 patents
US4964079AOct 16, 1990

Electrically programmable memory with several information bits per cell

SGS THOMSON MICROELECTRONICS176 citations99
US5950224ASep 7, 1999

Electrically modifiable non-volatile memory circuit having means for autonomous refreshing dependent upon on periodic clock pulses

SGS THOMSON MICROELECTRONICS29 citations92
US5579265ANov 26, 1996

Memory redundancy circuit

SGS THOMSON MICROELECTRONICS40 citations92
US4958324ASep 18, 1990

Method for the testing of electrically programmable memory cells, and corresponding integrated circuit

SGS THOMSON MICROELECTRONICS35 citations92
US6034895AMar 7, 2000

Method and circuit for the programming and erasure of a memory

SGS THOMSON MICROELECTRONICS14 citations74
US5742546AApr 21, 1998

Method and device for address decoding in an integrated circuit memory

SGS THOMSON MICROELECTRONICS14 citations74
US5537349AJul 16, 1996

Memory in integrated circuit form with improved reading time

SGS THOMSON MICROELECTRONICS15 citations74
US5436479AJul 25, 1995

Electrically programmable integrated memory with only one transistor

SGS THOMSON MICROELECTRONICS10 citations74
US6279068B2Aug 21, 2001

Set of two memories on the same monolithic integrated circuit

SGS THOMSON MICROELECTRONICS9 citations73
US6011724AJan 4, 2000

Circuit and method for the erasure of a non-volatile and electrically erasable memory

SGS THOMSON MICROELECTRONICS13 citations73
US5953253ASep 14, 1999

Word addressable floating-gate memory comprising a reference voltage generator circuit for the verification of the contents of a word

SGS THOMSON MICROELECTRONICS7 citations73
US5561621AOct 1, 1996

Non-volatile programmable bistable multivibrator with reduced parasitics in reading mode notably for memory redundancy circuit

SGS THOMSON MICROELECTRONICS13 citations73
US5099451AMar 24, 1992

Memory array with electrically programmable memory cells and electricaly unprogrammable, unerasable memory cells, both types of memory cells having floating gate transistors

SGS THOMSON MICROELECTRONICS18 citations73
US5303189AApr 12, 1994

High-speed memory with a limiter of the drain voltage of the cells

SGS THOMSON MICROELECTRONICS18 citations72
US4860256AAug 22, 1989

Integrated circuit provided with switching elements for changeover to redundancy elements in a memory

SGS THOMSON MICROELECTRONICS15 citations72
US5870336AFeb 9, 1999

Memory with improved reading time

SGS THOMSON MICROELECTRONICS4 citations63
US5622879AApr 22, 1997

Methods for fabricating and operating electrically erasable and programmable integrated circuit memory

SGS THOMSON MICROELECTRONICS4 citations63
US6205512B1Mar 20, 2001

Set of two memories on the same monolithic integrated circuit

SGS THOMSON MICROELECTRONICS2 citations62
US5959886ASep 28, 1999

Page-write indicator for non-volatile memory

SGS THOMSON MICROELECTRONICS3 citations62
US5862075AJan 19, 1999

Device for protection after a page-write operation in an electrically programmable memory

SGS THOMSON MICROELECTRONICS5 citations62
US6434056B2Aug 13, 2002

Set of two memories on the same monolithic integrated circuit

SGS THOMSON MICROELECTRONICS0 citations52

ST MICROELECTRONICS SA

14 patents
US6807103B2Oct 19, 2004

Page-erasable flash memory

ST MICROELECTRONICS SA183 citations98
US6219277B1Apr 17, 2001

Device and method for the reading of EEPROM cells

ST MICROELECTRONICS SA67 citations96
US6714453B2Mar 30, 2004

Flash memory including means of checking memory cell threshold voltages

ST MICROELECTRONICS SA24 citations92
US6411544B1Jun 25, 2002

Circuit for detecting and recording a voltage surge

ST MICROELECTRONICS SA27 citations92
US7068538B2Jun 27, 2006

Memory circuit with non-volatile identification memory and associated method

ST MICROELECTRONICS SA9 citations74
US6933764B2Aug 23, 2005

Integrated circuit comprising a voltage generator and a circuit limiting the voltage supplied by the voltage generator

ST MICROELECTRONICS SA8 citations74
US6621720B1Sep 16, 2003

Voltage production circuit

ST MICROELECTRONICS SA12 citations73
US6568510B2May 27, 2003

Flash memory including means of checking memory cell threshold voltages

ST MICROELECTRONICS SA7 citations73
US5991199ANov 23, 1999

Device and method for the programming of a memory

ST MICROELECTRONICS SA8 citations73
US7330381B2Feb 12, 2008

Method and apparatus for a continuous read command in an extended memory array

ST MICROELECTRONICS SA6 citations72
US7453732B2Nov 18, 2008

Method for programming memory cells including transconductance degradation detection

ST MICROELECTRONICS SA4 citations63
US7218553B2May 15, 2007

Method for programming memory cells including transconductance degradation detection

ST MICROELECTRONICS SA5 citations63
US6141254AOct 31, 2000

Method for programming an EPROM-flash type memory

ST MICROELECTRONICS SA1 citations52
US6420919B2Jul 16, 2002

Integrated circuit comprising an output transistor with a controlled fall time

ST MICROELECTRONICS SA0 citations51

THOMSON SEMICONDUCTEURS

2 patents

STMICROLECTRONICS S A

1 patent

(unassigned)

1 patent

BILDGEN MARCO

1 patent