Inventor
JO SEONG-KUE
KR18 patents
Patents
18 patentsUS7434122B2Oct 7, 2008
Flash memory device for performing bad block management and method of performing bad block management of flash memory device
SAMSUNG ELECTRONICS CO LTD92 citations97
US7710758B2May 4, 2010
Multichip system and method of transferring data therein
SAMSUNG ELECTRONICS CO LTD24 citations92
US7317648B2Jan 8, 2008
Memory logic for controlling refresh operations
SAMSUNG ELECTRONICS CO LTD34 citations92
US7102927B2Sep 5, 2006
Memory devices and programming methods that simultaneously store erase status indications for memory blocks
SAMSUNG ELECTRONICS CO LTD19 citations92
US6738282B2May 18, 2004
Random access memory and method for controlling operations of reading, writing, and refreshing data of the same
SAMSUNG ELECTRONICS CO LTD27 citations92
US6101144AAug 8, 2000
Integrated circuit memory devices having automatically induced standby modes and methods of operating same
SAMSUNG ELECTRONICS CO LTD28 citations92
US7317654B2Jan 8, 2008
Non-volatile memory devices having multi-page programming capabilities and related methods of operating such devices
SAMSUNG ELECTRONICS CO LTD13 citations84
US7533253B2May 12, 2009
System and method for fetching a boot code
SAMSUNG ELECTRONICS CO LTD9 citations83
US7295470B2Nov 13, 2007
Non-volatile memory device including multi-page copyback system and method
SAMSUNG ELECTRONICS CO LTD16 citations83
US6707744B2Mar 16, 2004
Apparatus for controlling refresh of memory device without external refresh command and method thereof
SAMSUNG ELECTRONICS CO LTD15 citations83
US7663924B2Feb 16, 2010
Non-volatile memory devices having multi-page programming capabilities and related methods of operating such devices
SAMSUNG ELECTRONICS CO LTD2 citations62
US7532521B2May 12, 2009
NOR-NAND flash memory device with interleaved mat access
SAMSUNG ELECTRONICS CO LTD3 citations62
US7327625B2Feb 5, 2008
Volatile memory devices with auto-refresh command unit and circuit for controlling auto-refresh operation thereof and related memory systems and operating methods
SAMSUNG ELECTRONICS CO LTD2 citations62
US6735109B2May 11, 2004
Uni-transistor random access memory device and control method thereof
SAMSUNG ELECTRONICS CO LTD2 citations62
US6473353B2Oct 29, 2002
Refresh method capable of reducing memory cell access time in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD2 citations61
US7486570B2Feb 3, 2009
Flash memory device having reduced program time and related programming method
SAMSUNG ELECTRONICS CO LTD0 citations52
US7490193B2Feb 10, 2009
Flash memory devices with MMC interfaces and methods of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US6553520B1Apr 22, 2003
Integrated circuit devices with mode-selective external signal routing capabilities and methods of operation therefor
SAMSUNG ELECTRONICS CO LTD1 citations51