P

Inventor

SBIAA RACHID

JP25 patents
⚠️ This page may combine multiple inventors who share the name “SBIAA RACHID”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TDK CORP

19 patents
US7495867B2Feb 24, 2009

Composite free layer for stabilizing magnetoresistive head

TDK CORP55 citations98
US7602591B2Oct 13, 2009

Exchange-coupled free layer with out-of-plane magnetization

TDK CORP20 citations92
US7473478B2Jan 6, 2009

Oscillator

TDK CORP45 citations92
US7606008B2Oct 20, 2009

Stabilizer for magnetoresistive head and method of manufacture

TDK CORP13 citations84
US7599154B2Oct 6, 2009

Stabilized spin valve head and method of manufacture

TDK CORP19 citations84
US7423851B2Sep 9, 2008

Magneto-resistive element and device being provided with magneto-resistive element having magnetic nano-contact

TDK CORP11 citations84
US7280323B2Oct 9, 2007

Magnetoresistance effect element and magnetic head

TDK CORP14 citations84
US7206174B2Apr 17, 2007

Magnetoresistance effect element comprising nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same

TDK CORP11 citations84
US7173797B2Feb 6, 2007

Thin-film magnetic head

TDK CORP10 citations84
US7184247B2Feb 27, 2007

Magnetoresistance effect element comprising nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same

TDK CORP6 citations74
US7167347B2Jan 23, 2007

Magnetoresistance effect element and magnetic head with nano-contact portion not more than a fermi length placed between dual layers

TDK CORP6 citations74
US7068479B2Jun 27, 2006

Magnetoresistance effect element comprising nano-contact portion not more than a fermi length, and magnetic head utilizing same

TDK CORP8 citations74
US7583482B2Sep 1, 2009

Magnetoresistive element and magnetoresistive device having a free layer stabilized by an in-stack bias

TDK CORP5 citations63
US7583480B2Sep 1, 2009

Magnetoresistance effect element with nano-junction between free and pinned layers

TDK CORP3 citations63
US7522389B2Apr 21, 2009

Magnetoresistance effect element comprising a nano-contact portion not more than a fermi length, method of manufacturing same and magnetic head utilizing same

TDK CORP3 citations63
US7236335B2Jun 26, 2007

Magnetoresistive head

TDK CORP6 citations63
US7123451B2Oct 17, 2006

Thin-film magnetic head for reading magnetic information on a hard disk by utilizing a magnetoresistance effect

TDK CORP5 citations63
US8023232B2Sep 20, 2011

Film and method for producing nano-particles for magnetoresistive device

TDK CORP0 citations52
US7733611B2Jun 8, 2010

Magnetoresistance effect element comprising nano-contact portion not more than a mean free path and magnetic head utilizing same

TDK CORP0 citations52

HEADWAY TECHNOLOGIES INC

2 patents

MENG HAO

2 patents

AGENCY SCIENCE TECH & RES

1 patent

LUO YUANHONG

1 patent