Inventor

KOCON CHRISTOPHER B

US32 patents

⚠️ This page may combine multiple inventors who share the name “KOCON CHRISTOPHER B”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KOCON CHRISTOPHER B

FAIRCHILD SEMICONDUCTOR

MOS-gated devices with alternating zones of conductivity

Trenched shield gate power semiconductor devices and methods of manufacture

Power semiconductor devices and methods of manufacture

Power semiconductor devices and methods of manufacture

Method and apparatus for improved MOS gating to reduce miller capacitance and switching losses

MOS-gated device having a buried gate and process for forming same

Process for forming MOS-gated power device having segmented trench and extended doping zone

MOS-gated power device having segmented trench and extended doping zone and process for forming same

Lateral device with improved conductivity and blocking control

Buried gate-field termination structure

Structure and method for improving shielded gate field effect transistors

MOS-gated device having a buried gate and process for forming same

Power semiconductor devices and methods of manufacture

Power semiconductor devices with shield and gate contacts and methods of manufacture

Monolithically-integrated buck converter

Trench FET with improved body to gate alignment

Method for improved MOS gating to reduce miller capacitance and switching losses

Power MOS device with buried gate

MOS-gated power device with doped polysilicon body and process for forming same

Power MOS device with buried gate and groove

Trench-gated device having trench walls formed by selective epitaxial growth and process for forming device

MOS-gated power device with doped polysilicon body and process for forming same

MOS-gated device having a buried gate and process for forming same

INTERSIL CORP

MOS-gated power device having extended trench and doping zone and process for forming same

High density MOS-gated power device and process for forming same

CHALLA ASHOK

Methods of making power semiconductor devices with thick bottom oxide layer

Methods related to power semiconductor devices with thick bottom oxide layers

YEDINAK JOSEPH A

Methods of manufacturing power semiconductor devices with shield and gate contacts

GREBS THOMAS E

Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices

SAPP STEVEN

Synchronous buck converter using shielded gate field effect transistors

(unassigned)

Method of making shallow well MOSFET structure

KOREC JACEK

Integration of MOSFETs in a source-down configuration