Inventor
MACAULAY JOHN M
US35 patents
⚠️ This page may combine multiple inventors who share the name “MACAULAY JOHN M”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANDESCENT TECH CORP
23 patentsUS5913704AJun 22, 1999
Fabrication of electronic devices by method that involves ion tracking
CANDESCENT TECH CORP51 citations96
US5801477ASep 1, 1998
Gated filament structures for a field emission display
CANDESCENT TECH CORP32 citations96
US5608283AMar 4, 1997
Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
CANDESCENT TECH CORP55 citations96
US6019658AFeb 1, 2000
Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings, typically in combination with spacer material to control spacing between gate layer and electron-emissive elements
CANDESCENT TECH CORP17 citations93
US5914150AJun 22, 1999
Formation of polycarbonate film with apertures determined by etching charged-particle tracks
CANDESCENT TECH CORP70 citations93
US6617772B1Sep 9, 2003
Flat-panel display having spacer with rough face for inhibiting secondary electron escape
CANDESCENT TECH CORP22 citations92
US6204596B1Mar 20, 2001
Filamentary electron-emission device having self-aligned gate or/and lower conductive/resistive region
CANDESCENT TECH CORP25 citations92
US5897414AApr 27, 1999
Technique for increasing manufacturing yield of matrix-addressable device
CANDESCENT TECH CORP48 citations92
US5755944AMay 26, 1998
Formation of layer having openings produced by utilizing particles deposited under influence of electric field
CANDESCENT TECH CORP48 citations92
US5900301AMay 4, 1999
Structure and fabrication of electron-emitting devices utilizing electron-emissive particles which typically contain carbon
CANDESCENT TECH CORP24 citations90
US5766446AJun 16, 1998
Electrochemical removal of material, particularly excess emitter material in electron-emitting device
CANDESCENT TECH CORP52 citations90
US6187603B1Feb 13, 2001
Fabrication of gated electron-emitting devices utilizing distributed particles to define gate openings, typically in combination with lift-off of excess emitter material
CANDESCENT TECH CORP15 citations84
US5827099AOct 27, 1998
Use of early formed lift-off layer in fabricating gated electron-emitting devices
CANDESCENT TECH CORP11 citations82
US5666025ASep 9, 1997
Flat-panel display containing structure for enhancing electron emission from carbon-containing cathode
CANDESCENT TECH CORP13 citations82
US6356014B2Mar 12, 2002
Electron emitters coated with carbon containing layer
CANDESCENT TECH CORP12 citations74
US5865659AFeb 2, 1999
Fabrication of gated electron-emitting device utilizing distributed particles to define gate openings and utilizing spacer material to control spacing between gate layer and electron-emissive elements
CANDESCENT TECH CORP14 citations74
US5851669ADec 22, 1998
Field-emission device that utilizes filamentary electron-emissive elements and typically has self-aligned gate
CANDESCENT TECH CORP8 citations74
US5728435AMar 17, 1998
Method for enhancing electron emission from carbon-containing cathode
CANDESCENT TECH CORP10 citations73
US5893967AApr 13, 1999
Impedance-assisted electrochemical removal of material, particularly excess emitter material in electron-emitting device
CANDESCENT TECH CORP8 citations72
US7025892B1Apr 11, 2006
Method for creating gated filament structures for field emission displays
CANDESCENT TECH CORP4 citations63
US5813892ASep 29, 1998
Use of charged-particle tracks in fabricating electron-emitting device having resistive layer
CANDESCENT TECH CORP4 citations63
US5665421ASep 9, 1997
Method for creating gated filament structures for field emission displays
CANDESCENT TECH CORP6 citations63
US6515407B1Feb 4, 2003
Gated filament structures for a field emission display
CANDESCENT TECH CORP0 citations52
SILICON VIDEO CORP
8 patentsUS5578185ANov 26, 1996
Method for creating gated filament structures for field emision displays
SILICON VIDEO CORP118 citations99
US5559389ASep 24, 1996
Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
SILICON VIDEO CORP142 citations99
US5564959AOct 15, 1996
Use of charged-particle tracks in fabricating gated electron-emitting devices
SILICON VIDEO CORP73 citations96
US5463271AOct 31, 1995
Structure for enhancing electron emission from carbon-containing cathode
SILICON VIDEO CORP66 citations96
US5462467AOct 31, 1995
Fabrication of filamentary field-emission device, including self-aligned gate
SILICON VIDEO CORP54 citations96
US5562516AOct 8, 1996
Field-emitter fabrication using charged-particle tracks
SILICON VIDEO CORP29 citations92
US5552659ASep 3, 1996
Structure and fabrication of gated electron-emitting device having electron optics to reduce electron-beam divergence
SILICON VIDEO CORP49 citations91
US5607335AMar 4, 1997
Fabrication of electron-emitting structures using charged-particle tracks and removal of emitter material
SILICON VIDEO CORP12 citations74