P

Inventor

CHEN MIN-LIANG

TW32 patents
⚠️ This page may combine multiple inventors who share the name “CHEN MIN-LIANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MOSEL VITELIC INC

21 patents
US5827747AOct 27, 1998

Method for forming LDD CMOS using double spacers and large-tilt-angle ion implantation

MOSEL VITELIC INC69 citations96
US6100561AAug 8, 2000

Method for forming LDD CMOS using double spacers and large-tilt-angle ion implantation

MOSEL VITELIC INC21 citations92
US5930631AJul 27, 1999

Method of making double-poly MONOS flash EEPROM cell

MOSEL VITELIC INC50 citations92
US5885866AMar 23, 1999

Self-registered cylindrical capacitor of high density DRAMs

MOSEL VITELIC INC41 citations92
US5789297AAug 4, 1998

Method of making EEPROM cell device with polyspacer floating gate

MOSEL VITELIC INC38 citations92
US5703388ADec 30, 1997

Double-poly monos flash EEPROM cell

MOSEL VITELIC INC43 citations92
US5686324ANov 11, 1997

Process for forming LDD CMOS using large-tilt-angle ion implantation

MOSEL VITELIC INC37 citations92
US5679595AOct 21, 1997

Self-registered capacitor bottom plate-local interconnect scheme for DRAM

MOSEL VITELIC INC37 citations92
US5514609AMay 7, 1996

Through glass ROM code implant to reduce product delivering time

MOSEL VITELIC INC18 citations79
US5966632AOct 12, 1999

Method of forming borderless metal to contact structure

MOSEL VITELIC INC19 citations77
US6100126AAug 8, 2000

Method of making a resistor utilizing a polysilicon plug formed with a high aspect ratio

MOSEL VITELIC INC10 citations74
US6020231AFeb 1, 2000

Method for forming LDD CMOS

MOSEL VITELIC INC15 citations74
US5926712AJul 20, 1999

Process for fabricating MOS device having short channel

MOSEL VITELIC INC16 citations73
US5792686AAug 11, 1998

Method of forming a bit-line and a capacitor structure in an integrated circuit

MOSEL VITELIC INC15 citations73
US5691223ANov 25, 1997

Method of fabricating a capacitor over a bit line DRAM process

MOSEL VITELIC INC15 citations73
US5681772AOct 28, 1997

Through glass ROM code implant to reduce product delivering time

MOSEL VITELIC INC10 citations71
US6107193AAug 22, 2000

Completely removal of TiN residue on dual damascence process

MOSEL VITELIC INC12 citations66
US6271556B1Aug 7, 2001

High density memory structure

MOSEL VITELIC INC3 citations62
US5880496AMar 9, 1999

Semiconductor having self-aligned polysilicon electrode layer

MOSEL VITELIC INC4 citations62
US5691562ANov 25, 1997

Through glass ROM code implant to reduce product delivering time

MOSEL VITELIC INC2 citations60
US5972746AOct 26, 1999

Method for manufacturing semiconductor devices using double-charged implantation

MOSEL VITELIC INC1 citations51

AT & T BELL LAB

7 patents

LUCENT TECHNOLOGIES INC

2 patents

AMERICAN TELEPHONE & TELEGRAPH

1 patent

PROMOS TECHNOLOGIES INC

1 patent