Inventor
SHEN KUEI-HUNG
TW35 patents
⚠️ This page may combine multiple inventors who share the name “SHEN KUEI-HUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS10270025B2Apr 23, 2019
Semiconductor structure having magnetic tunneling junction (MTJ) layer
TAIWAN SEMICONDUCTOR MFG CO LTD20 citations94
US10038137B2Jul 31, 2018
MRAM device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD50 citations93
US10164169B2Dec 25, 2018
Memory device having a single bottom electrode layer
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US9893120B2Feb 13, 2018
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US9842986B2Dec 12, 2017
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10991758B2Apr 27, 2021
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10720571B2Jul 21, 2020
Magnetic memory structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10686125B2Jun 16, 2020
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10636961B2Apr 28, 2020
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10304903B2May 28, 2019
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10008538B2Jun 26, 2018
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10665321B2May 26, 2020
Method for testing MRAM device and test apparatus thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations72
US12133470B2Oct 29, 2024
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11515473B2Nov 29, 2022
Semiconductor device including a magnetic tunneling junction (MTJ) device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12520731B2Jan 6, 2026
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12250826B2Mar 11, 2025
Integrated circuit device and method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11832529B2Nov 28, 2023
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11316096B2Apr 26, 2022
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11227893B2Jan 18, 2022
Semiconductor structure and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12517194B2Jan 6, 2026
Magnet configuration systems and methods to detect magnetic tunnel junction coercivity weak bits in MRAM chips
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10868234B2Dec 15, 2020
Storage device having magnetic tunnel junction cells of different sizes, and method of forming storage device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42
IND TECH RES INST
8 patentsUS7254059B2Aug 7, 2007
Multilevel phase-change memory element and operating method
IND TECH RES INST130 citations97
US9231191B2Jan 5, 2016
Magnetic tunnel junction device and method of making same
IND TECH RES INST33 citations94
US7583529B2Sep 1, 2009
Magnetic tunnel junction devices and magnetic random access memory
IND TECH RES INST24 citations92
US9172032B2Oct 27, 2015
Magnetic tunnel junction device with perpendicular magnetization and method of fabricating the same
IND TECH RES INST7 citations84
US7606063B2Oct 20, 2009
Magnetic memory device
IND TECH RES INST16 citations80
US7843719B2Nov 30, 2010
Magnetic shift register and data accessing method
IND TECH RES INST7 citations74
US8901687B2Dec 2, 2014
Magnetic device with a substrate, a sensing block and a repair layer
IND TECH RES INST0 citations51
US9166149B2Oct 20, 2015
Magnetic device with a substrate, a sensing block and a repair layer
IND TECH RES INST0 citations40