Inventor
MEUNIER-BEILLARD PHILIPPE
BE26 patents
⚠️ This page may combine multiple inventors who share the name “MEUNIER-BEILLARD PHILIPPE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NXP BV
16 patentsUS7605060B2Oct 20, 2009
Method of epitaxial deoposition of an n-doped silicon layer
NXP BV119 citations94
US7923339B2Apr 12, 2011
Method of producing an epitaxial layer on semiconductor substrate and device produced with such a method
NXP BV47 citations92
US7671447B2Mar 2, 2010
Bipolar transistor and method of manufacturing the same
NXP BV8 citations83
US8373236B2Feb 12, 2013
Semiconductor device and method of manufacturing such a device
NXP BV15 citations79
US7825011B2Nov 2, 2010
Method of manufacturing a semiconductor device and semiconductor device obtained by means of said method
NXP BV7 citations73
US7394144B2Jul 1, 2008
Trench semiconductor device and method of manufacturing it
NXP BV8 citations72
US7615390B2Nov 10, 2009
Method and apparatus for forming expitaxial layers
NXP BV7 citations70
US7785993B2Aug 31, 2010
Method of growing a strained layer
NXP BV5 citations62
US7910448B2Mar 22, 2011
Method for fabricating a mono-crystalline emitter
NXP BV5 citations57
US7867864B2Jan 11, 2011
Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
NXP BV2 citations57
US7554138B2Jun 30, 2009
Method of manufacturing a strained semiconductor layer, method of manufacturing a semiconductor device and semiconductor substrate suitable for use in such a method including having a thin delta profile layer of germanium close to the bottom of the strained layer
NXP BV6 citations57
US7906403B2Mar 15, 2011
Bipolar transistor and method of fabricating the same
NXP BV5 citations55
US7956399B2Jun 7, 2011
Semiconductor device with low buried resistance and method of manufacturing such a device
NXP BV1 citations51
US7605027B2Oct 20, 2009
Method of fabricating a bipolar transistor
NXP BV0 citations40
US7939854B2May 10, 2011
Semiconductor device with a bipolar transistor and method of manufacturing such a device
NXP BV0 citations34
US7618858B2Nov 17, 2009
Method of fabricating a heterojunction bipolar transistor
NXP BV0 citations30
MEUNIER-BEILLARD PHILIPPE
5 patentsUS8242500B2Aug 14, 2012
Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistor
MEUNIER-BEILLARD PHILIPPE2 citations61
US8476675B2Jul 2, 2013
Semiconductor device and method of manufacture thereof
MEUNIER-BEILLARD PHILIPPE4 citations60
US8431966B2Apr 30, 2013
Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained thereby
MEUNIER-BEILLARD PHILIPPE3 citations60
US8524551B2Sep 3, 2013
Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistor
MEUNIER-BEILLARD PHILIPPE1 citations51
US8541812B2Sep 24, 2013
Semiconductor device and method of manufacture thereof
MEUNIER-BEILLARD PHILIPPE1 citations46