Inventor
MOON BYUNG-SIK
KR19 patents
⚠️ This page may combine multiple inventors who share the name “MOON BYUNG-SIK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
12 patentsUS6151263ANov 21, 2000
Integrated circuit memory devices having data input and output lines extending along the column direction
SAMSUNG ELECTRONICS CO LTD19 citations92
US9245827B2Jan 26, 2016
3D semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations84
US7307910B2Dec 11, 2007
Redundancy program circuit and methods thereof
SAMSUNG ELECTRONICS CO LTD10 citations83
US7477565B2Jan 13, 2009
Redundancy program circuit and methods thereof
SAMSUNG ELECTRONICS CO LTD4 citations73
US6304500B1Oct 16, 2001
Integrated circuit memory devices having data input and output lines extending in the column direction, and circuits and methods for repairing faulty cells
SAMSUNG ELECTRONICS CO LTD5 citations63
US7692995B2Apr 6, 2010
Redundancy program circuit and methods thereof
SAMSUNG ELECTRONICS CO LTD1 citations62
US7606090B2Oct 20, 2009
Redundancy program circuit and methods thereof
SAMSUNG ELECTRONICS CO LTD2 citations62
US7245542B2Jul 17, 2007
Memory device having open bit line cell structure using burn-in testing scheme and method therefor
SAMSUNG ELECTRONICS CO LTD5 citations62
US7027339B2Apr 11, 2006
Memory device employing open bit line architecture for providing identical data topology on repaired memory cell block and method thereof
SAMSUNG ELECTRONICS CO LTD5 citations62
US7898881B2Mar 1, 2011
Semiconductor memory device and data sensing method thereof
SAMSUNG ELECTRONICS CO LTD1 citations51
US7609580B2Oct 27, 2009
Redundancy program circuit and methods thereof
SAMSUNG ELECTRONICS CO LTD0 citations51
US8045404B2Oct 25, 2011
Semiconductor memory device capable of preventing damage to a bitline during a data masking operation
SAMSUNG ELECTRONICS CO LTD0 citations40
SON JONG-PIL
4 patentsUS8547763B2Oct 1, 2013
Memory cell, methods of manufacturing memory cell, and memory device having the same
SON JONG-PIL14 citations83
US8514648B2Aug 20, 2013
Anti-fuse, anti-fuse circuit including the same, and method of fabricating the anti-fuse
SON JONG-PIL2 citations62
US8482989B2Jul 9, 2013
Semiconductor device including fuse array and method of operation the same
SON JONG-PIL4 citations61
US8848475B2Sep 30, 2014
Fuse circuit, fuse array, semiconductor memory device and method of manufacturing semiconductor device
SON JONG-PIL1 citations51