P

Inventor

ABIKO YUYA

JP12 patents

Patents

12 patents
US8921927B2Dec 30, 2014

Method of manufacturing vertical planar power MOSFET and method of manufacturing trench-gate power MOSFET

RENESAS ELECTRONICS CORP5 citations81
US8796094B2Aug 5, 2014

Method of manufacturing vertical planar power MOSFET and method of manufacturing trench-gate power MOSFET

RENESAS ELECTRONICS CORP5 citations81
US9972713B2May 15, 2018

Semiconductor device and method of manufacturing same

RENESAS ELECTRONICS CORP6 citations72
US9786735B2Oct 10, 2017

Semiconductor device and method of manufacturing the same

RENESAS ELECTRONICS CORP3 citations72
US9905644B2Feb 27, 2018

Semiconductor device and manufacturing method for the semiconductor device

RENESAS ELECTRONICS CORP2 citations71
US9530838B2Dec 27, 2016

Semiconductor device and manufacturing method for the same

RENESAS ELECTRONICS CORP3 citations71
US10355122B2Jul 16, 2019

Semiconductor device and method of manufacturing the semiconductor device

RENESAS ELECTRONICS CORP2 citations70
US10141397B2Nov 27, 2018

Semiconductor device and method of manufacturing the same

RENESAS ELECTRONICS CORP0 citations51
US10204987B2Feb 12, 2019

Semiconductor device and manufacturing method for the semiconductor device

RENESAS ELECTRONICS CORP0 citations50
US8647948B2Feb 11, 2014

Method of manufacturing vertical planar power MOSFET and method of manufacturing trench-gate power MOSFET

RENESAS ELECTRONICS CORP1 citations49
US9997621B2Jun 12, 2018

Semiconductor device and manufacturing method of the same

RENESAS ELECTRONICS CORP0 citations41
US10651277B2May 12, 2020

Semiconductor device and method of manufacturing the same

RENESAS ELECTRONICS CORP0 citations39