Inventor

SAMOILOV ARKADII V

US66 patents

⚠️ This page may combine multiple inventors who share the name “SAMOILOV ARKADII V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMOILOV ARKADII V

APPLIED MATERIALS INC

Methods of selective deposition of heavily doped epitaxial SiGe

Methods to fabricate MOSFET devices using selective deposition process

Process and apparatus for cleaning a silicon surface

Use of Cl2 and/or HCl during silicon epitaxial film formation

Selective epitaxy process with alternating gas supply

Low temperature etchant for treatment of silicon-containing surfaces

Method for CVD process control for enhancing device performance

Backside heating chamber for emissivity independent thermal processes

Selective epitaxy process with alternating gas supply

Selective epitaxy process with alternating gas supply

Method for fabricating waveguides

Use of CL2 and/or HCL during silicon epitaxial film formation

Use of Cl2 and/or HCl during silicon epitaxial film formation

Methods of selective deposition of heavily doped epitaxial SiGe

Methods to fabricate MOSFET devices using a selective deposition process

Methods to fabricate MOSFET devices using a selective deposition process

Carbon precursors for use during silicon epitaxial film formation

Method of calibrating and using a semiconductor processing system

Method for CVD process control for enhancing device performance

Formation and treatment of epitaxial layer containing silicon and carbon

MAXIM INTEGRATED PRODUCTS

Optical sensor packages employing cloaking layers

Fully integrated gas concentration sensor

Multichip wafer level package (WLP) optical device

Fan-out and heterogeneous packaging of electronic components

Wafer-level package device having solder bump assemblies that include an inner pillar structure

Semiconductor device having a die and through substrate-via

Fully integrated gas concentration sensor

Light sensor having transparent substrate and diffuser formed therein

Ultraviolet sensor having filter

Wafer level lens in package

Wafer-level packaged device having self-assembled resilient leads

Wafer-level package device with solder bump reinforcement

Semiconductor device having a through-substrate via

Wafer-level packaged device having self-assembled resilient leads

Semiconductor device having a die and through-substrate via

Solder fatigue arrest for wafer level package

KERNESS NICOLE D

Light sensor having transparent substrate with lens formed therein

Light sensor having transparent substrate and diffuser formed therein

Light sensor having a contiguous IR suppression filter and a transparent substrate

Light sensor having a transparent substrate, a contiguous IR suppression filter and through-substrate vias

ZOJAJI ALI

Etchant treatment processes for substrate surfaces and chamber surfaces

Etchant treatment processes for substrate surfaces and chamber surfaces

SAMOILOV ARKADII V

Semiconductor device having a through-substrate via

Light sensor using wafer-level packaging

PARVARANDEH PIROOZ

Wafer-level chip-scale package device having bump assemblies configured to mitigate failures due to stress

LO CHIUNG C

Wafer-level packaged device having self-assembled resilient leads

ZHOU TIAO

Wafer level package (WLP) device having bump assemblies including a barrier metal

(unassigned)

Waveguides such as SiGeC waveguides and method of fabricating the same

QUALCOMM INC

High-resolution electric field sensor in cover glass

MAYDAN DAN

Method for fabricating waveguides