Inventor
LEE JIN YUL
KR31 patents
⚠️ This page may combine multiple inventors who share the name “LEE JIN YUL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
13 patentsUS9786598B2Oct 10, 2017
Semiconductor device with air gaps and method for fabricating the same
SK HYNIX INC31 citations94
US9508847B2Nov 29, 2016
Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the same
SK HYNIX INC18 citations92
US8999837B2Apr 7, 2015
Semiconductor device with air gap
SK HYNIX INC21 citations92
US10395973B2Aug 27, 2019
Isolation structure and method for manufacturing the same
SK HYNIX INC5 citations84
US9865496B2Jan 9, 2018
Method for manufacturing isolation structure
SK HYNIX INC7 citations84
US9634109B2Apr 25, 2017
Semiconductor device having dual work function gate structure, method for fabricating the same, transistor circuit having the same, memory cell having the same, and electronic device having the same
SK HYNIX INC12 citations84
US8866208B2Oct 21, 2014
Semiconductor devices including vertical transistors and methods of fabricating the same
SK HYNIX INC19 citations84
US9818843B2Nov 14, 2017
Transistor having dual work function buried gate electrode and method for fabricating the same
SK HYNIX INC6 citations83
US9530849B2Dec 27, 2016
Transistor having dual work function buried gate electrode and method for fabricating the same
SK HYNIX INC9 citations83
US9245849B2Jan 26, 2016
Semiconductor device with air gap
SK HYNIX INC9 citations83
US10256136B2Apr 9, 2019
Method of manufacturing isolation structure for semiconductor device
SK HYNIX INC2 citations73
US9214348B2Dec 15, 2015
Semiconductor device including a gate dielectric layer
SK HYNIX INC6 citations72
US8975132B2Mar 10, 2015
Semiconductor device with isolation layer, electronic device having the same, and method for fabricating the same
SK HYNIX INC0 citations50
HYNIX SEMICONDUCTOR INC
9 patentsUS7838405B2Nov 23, 2010
Method for manufacturing semiconductor device having bulb-type recessed channel
HYNIX SEMICONDUCTOR INC7 citations74
US7927945B2Apr 19, 2011
Method for manufacturing semiconductor device having 4F2 transistor
HYNIX SEMICONDUCTOR INC4 citations63
US7808057B2Oct 5, 2010
PMOS transistor with increased effective channel length in the peripheral region and method of manufacturing the same
HYNIX SEMICONDUCTOR INC3 citations63
US7799641B2Sep 21, 2010
Method for forming a semiconductor device having recess channel
HYNIX SEMICONDUCTOR INC4 citations59
US8815689B2Aug 26, 2014
Method for fabricating a semiconductor device having a saddle fin transistor
HYNIX SEMICONDUCTOR INC1 citations52
US7960268B2Jun 14, 2011
Method for forming gate having metal layer in semiconductor device
HYNIX SEMICONDUCTOR INC0 citations52
US7824979B2Nov 2, 2010
Semiconductor device with channel of FIN structure and method for manufacturing the same
HYNIX SEMICONDUCTOR INC0 citations52
US7781829B2Aug 24, 2010
Semiconductor device having recessed channel and method for manufacturing the same
HYNIX SEMICONDUCTOR INC0 citations52
US7468301B2Dec 23, 2008
PMOS transistor with increased effective channel length in the peripheral region and a multi-height substrate
HYNIX SEMICONDUCTOR INC0 citations52
LEE JIN YUL
5 patentsUS8455945B2Jun 4, 2013
Semiconductor device having saddle fin transistor and method for fabricating the same
LEE JIN YUL11 citations83
US8900947B2Dec 2, 2014
Semiconductor devices including conductive plugs and methods of manufacturing the same
LEE JIN YUL0 citations51
US8247878B2Aug 21, 2012
Semiconductor device and method of manufacturing the same
LEE JIN YUL0 citations51
US8097509B2Jan 17, 2012
Method for manufacturing semiconductor device with a recessed channel
LEE JIN YUL0 citations51
US8241994B2Aug 14, 2012
Method for fabricating isolation layer in semiconductor device
LEE JIN YUL0 citations41