P

Inventor

LIM HA-JIN

KR35 patents
⚠️ This page may combine multiple inventors who share the name “LIM HA-JIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

24 patents
US7482677B2Jan 27, 2009

Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures

SAMSUNG ELECTRONICS CO LTD88 citations98
US7651729B2Jan 26, 2010

Method of fabricating metal silicate layer using atomic layer deposition technique

SAMSUNG ELECTRONICS CO LTD61 citations97
US7547951B2Jun 16, 2009

Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD36 citations92
US9859392B2Jan 2, 2018

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7973309B2Jul 5, 2011

TEG pattern for detecting void in device isolation layer and method of forming the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US7952118B2May 31, 2011

Semiconductor device having different metal gate structures

SAMSUNG ELECTRONICS CO LTD14 citations84
US7829953B2Nov 9, 2010

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7396777B2Jul 8, 2008

Method of fabricating high-k dielectric layer having reduced impurity

SAMSUNG ELECTRONICS CO LTD10 citations84
US7615830B2Nov 10, 2009

Transistors with multilayered dielectric films

SAMSUNG ELECTRONICS CO LTD5 citations74
US11183525B2Nov 23, 2021

Image sensor including laser shield pattern

SAMSUNG ELECTRONICS CO LTD2 citations73
US9728463B2Aug 8, 2017

Methods of manufacturing semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations70
US11152415B2Oct 19, 2021

Image sensor with separation pattern and image sensor module including the same

SAMSUNG ELECTRONICS CO LTD4 citations69
US8013402B2Sep 6, 2011

Transistors with multilayered dielectric films

SAMSUNG ELECTRONICS CO LTD3 citations63
US11257857B2Feb 22, 2022

Image sensors including photoelectric conversion devices, trench, supporter, and isolation layer

SAMSUNG ELECTRONICS CO LTD1 citations61
US8963227B2Feb 24, 2015

Semiconductor devices having a diffusion barrier layer and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations61
US10312341B2Jun 4, 2019

Integrated circuit device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US8975171B1Mar 10, 2015

Method of forming a high-k crystalline dielectric

SAMSUNG ELECTRONICS CO LTD0 citations52
US8970014B2Mar 3, 2015

Semiconductor devices with dielectric layers

SAMSUNG ELECTRONICS CO LTD0 citations52
US7648874B2Jan 19, 2010

Method of forming a dielectric structure having a high dielectric constant and method of manufacturing a semiconductor device having the dielectric structure

SAMSUNG ELECTRONICS CO LTD0 citations52
US10276694B2Apr 30, 2019

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US9515186B2Dec 6, 2016

Semiconductor device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations51
US9023718B2May 5, 2015

Method of fabricating semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51
US10854677B2Dec 1, 2020

Image sensor

SAMSUNG ELECTRONICS CO LTD0 citations50
US7767512B2Aug 3, 2010

Methods of manufacturing a semiconductor device including CMOS transistor having different PMOS and NMOS gate electrode structures

SAMSUNG ELECTRONICS CO LTD0 citations41

LIM HA-JIN

8 patents

SONG MOON-KYUN

1 patent

PARK PAN-KWI

1 patent

DO JIN-HO

1 patent