Inventor
YANG YOUNGHWI
KR7 patents
⚠️ This page may combine multiple inventors who share the name “YANG YOUNGHWI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
QUALCOMM INC
5 patentsUS9336863B2May 10, 2016
Dual write wordline memory cell
QUALCOMM INC11 citations84
US9111635B2Aug 18, 2015
Static random access memories (SRAM) with read-preferred cell structures, write drivers, related systems, and methods
QUALCOMM INC8 citations84
US9583178B2Feb 28, 2017
SRAM read preferred bit cell with write assist circuit
QUALCOMM INC12 citations83
US10037795B2Jul 31, 2018
Seven-transistor static random-access memory bitcell with reduced read disturbance
QUALCOMM INC2 citations73
US9460777B2Oct 4, 2016
SRAM read buffer with reduced sensing delay and improved sensing margin
QUALCOMM INC2 citations62
SAMSUNG ELECTRONICS CO LTD
2 patentsUS11475972B2Oct 18, 2022
Non-volatile memory device, controller for controlling the same, storage device having the same, and reading method thereof
SAMSUNG ELECTRONICS CO LTD2 citations72
US11990189B2May 21, 2024
Nonvolatile memory device and programming method of nonvolatile memory
SAMSUNG ELECTRONICS CO LTD0 citations50