Inventor
TANG YUKIT
US25 patents
⚠️ This page may combine multiple inventors who share the name “TANG YUKIT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
10 patentsUS9368443B1Jun 14, 2016
Memory metal scheme
TAIWAN SEMICONDUCTOR MFG6 citations84
US9218857B2Dec 22, 2015
Method of memory with regulated ground nodes
TAIWAN SEMICONDUCTOR MFG6 citations83
US8743581B2Jun 3, 2014
Memory devices having break cells
TAIWAN SEMICONDUCTOR MFG8 citations83
US8817568B2Aug 26, 2014
Dual rail memory
TAIWAN SEMICONDUCTOR MFG2 citations62
US8351279B2Jan 8, 2013
SRAM bitcell data retention control for leakage optimization
TAIWAN SEMICONDUCTOR MFG2 citations62
US9343125B2May 17, 2016
Memory macro with a voltage keeper
TAIWAN SEMICONDUCTOR MFG2 citations61
US8988948B2Mar 24, 2015
Memory macro with a voltage keeper
TAIWAN SEMICONDUCTOR MFG2 citations61
US8935641B2Jan 13, 2015
Semiconductor circuit design method, memory compiler and computer program product
TAIWAN SEMICONDUCTOR MFG3 citations61
US9298875B2Mar 29, 2016
Semiconductor circuit design method, memory compiler and computer program product
TAIWAN SEMICONDUCTOR MFG0 citations50
US8997031B2Mar 31, 2015
Timing delay characterization method, memory compiler and computer program product
TAIWAN SEMICONDUCTOR MFG0 citations50
TAIWAN SEMICONDUCTOR MFG CO LTD
8 patentsUS9478269B2Oct 25, 2016
Tracking mechanisms
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9418717B2Aug 16, 2016
Tracking mechanism for writing to a memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9530487B2Dec 27, 2016
Method of writing memory with regulated ground nodes
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US10176282B2Jan 8, 2019
Timing delay characterization method, memory compiler and computer program product
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10424587B2Sep 24, 2019
Memory metal scheme
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9818752B2Nov 14, 2017
Memory metal scheme
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9576622B2Feb 21, 2017
Reading data from a memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9978446B2May 22, 2018
Memory with regulated ground nodes and method of retaining data therein
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51