Inventor
LICHTENWALNER DANIEL J
US15 patents
⚠️ This page may combine multiple inventors who share the name “LICHTENWALNER DANIEL J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
WOLFSPEED INC
8 patentsUS11610991B2Mar 21, 2023
Gate trench power semiconductor devices having improved deep shield connection patterns
WOLFSPEED INC7 citations84
US11791378B2Oct 17, 2023
Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods
WOLFSPEED INC0 citations62
US12279448B2Apr 15, 2025
Trench bottom shielding methods and approaches for trenched semiconductor device structures
WOLFSPEED INC0 citations61
US11929420B2Mar 12, 2024
Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devices
WOLFSPEED INC0 citations61
US11837657B2Dec 5, 2023
Gate trench power semiconductor devices having improved deep shield connection patterns
WOLFSPEED INC0 citations61
US11563101B2Jan 24, 2023
Power semiconductor devices having multilayer gate dielectric layers that include an etch stop/field control layer and methods of forming such devices
WOLFSPEED INC0 citations61
US11355630B2Jun 7, 2022
Trench bottom shielding methods and approaches for trenched semiconductor device structures
WOLFSPEED INC0 citations61
US11837629B2Dec 5, 2023
Power semiconductor devices having gate trenches and buried edge terminations and related methods
WOLFSPEED INC0 citations60
CREE INC
7 patentsUS9887287B1Feb 6, 2018
Power semiconductor devices having gate trenches with implanted sidewalls and related methods
CREE INC86 citations95
US11075264B2Jul 27, 2021
Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods
CREE INC8 citations83
US9972677B2May 15, 2018
Methods of forming power semiconductor devices having superjunction structures with pillars having implanted sidewalls
CREE INC3 citations73
US9515199B2Dec 6, 2016
Power semiconductor devices having superjunction structures with implanted sidewalls
CREE INC3 citations73
US10861931B2Dec 8, 2020
Power semiconductor devices having gate trenches and buried edge terminations and related methods
CREE INC3 citations70
US12094926B2Sep 17, 2024
Sidewall dopant shielding methods and approaches for trenched semiconductor device structures
CREE INC0 citations50
US10998418B2May 4, 2021
Power semiconductor devices having reflowed inter-metal dielectric layers
CREE INC0 citations47