Inventor

NA TAEHUI

KR21 patents

⚠️ This page may combine multiple inventors who share the name “NA TAEHUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NA TAEHUI

QUALCOMM INC

System, apparatus, and method for sense amplifiers

System and method of sensing a memory cell

System and method to provide a reference cell using magnetic tunnel junction cells

Error correction and decoding

Dual mode sensing scheme

Constant sensing current for reading resistive memory

System, apparatus, and method for an offset cancelling single ended sensing circuit

Offset canceling dual stage sensing circuit

NMOS-offset canceling current-latched sense amplifier

Error correction and decoding

Latch offset cancelation for magnetoresistive random access memory

Sensing circuit for resistive memory cells

SAMSUNG ELECTRONICS CO LTD

Memory device with reduced read disturbance and method of operating the memory device

Variable resistance memory device

Memory device for avoiding multi-turn on of memory cell during reading, and operating method thereof

Memory device and operating method of memory device

Memory device having an increased sensing margin

Memory device and method of operating the same

QUALCOMM TECHNOLOGIES INC

Metal-oxide semiconductor (MOS) transistor offset-cancelling (OC), zero-sensing (ZS) dead zone, current-latched sense amplifiers (SAs) (CLSAs) (OCZS-SAs) for sensing differential voltages

Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin

IND ACADEMIC COOPERATION FOUND YONSEI UNIV

Spin-charge conversion based spin logic device