Inventor

YANG SHYH-HORNG

TW27 patents

⚠️ This page may combine multiple inventors who share the name “YANG SHYH-HORNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

YANG SHYH-HORNG

TAIWAN SEMICONDUCTOR MFG CO LTD

Fin field effect transistor having a highly doped region

FinFET and method of fabricating the same

Raised epitaxial LDD in MuGFETs and methods for forming the same

Raised epitaxial LDD in MuGFETs and methods for forming the same

Multi-gate devices with replaced-channels and methods for forming the same

Raised epitaxial LDD in MuGFETs and methods for forming the same

Multi-gate devices with replaced-channels and methods for forming the same

Method of manufacturing a FinFET device having a stepped profile

Method for fabricating a multi-gate device

Raised epitaxial LDD in MuGFETs and methods for forming the same

Raised epitaxial LDD in MuGFETs and methods for forming the same

TAIWAN SEMICONDUCTOR MFG

FinFET device including a stepped profile structure

Raised epitaxial LDD in MuGFETs

Local charge and work function engineering on MOSFET

Finfet and method of fabricating the same

Method for fabricating a multi-gate device

Method of designing a circuit and system for implementing the method

TEXAS INSTRUMENTS INC

SRAM cell with asymmetrical transistors for reduced leakage

Leakage current reduction method

Matched analog CMOS transistors with extension wells

Dual poly deposition and through gate oxide implants

HOUSTON THEODORE W

SRAM cell with asymmetrical pass gate

SRAM cell with asymmetrical pass gate

KUO CHIH-WEI

Multi-gate devices with replaced-channels and methods for forming the same

CHAO DONALD Y

FinFET and method of fabricating the same

MASUOKA YURI

Transistor performance with metal gate

HUANG HUAN-TSUNG

Local charge and work function engineering on MOSFET